Allicdata Part #: | IRGB5B120KDPBF-ND |
Manufacturer Part#: |
IRGB5B120KDPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 12A 89W TO220AB |
More Detail: | IGBT NPT 1200V 12A 89W Through Hole TO-220AB |
DataSheet: | IRGB5B120KDPBF Datasheet/PDF |
Quantity: | 46 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 89W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 160ns |
Test Condition: | 600V, 6A, 50 Ohm, 15V |
Td (on/off) @ 25°C: | 22ns/100ns |
Gate Charge: | 25nC |
Input Type: | Standard |
Switching Energy: | 390µJ (on), 330µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 6A |
Current - Collector Pulsed (Icm): | 24A |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Last Time Buy |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRGB5B120KDPBF is a 5th generation IGBT module developed by Infineon Technologies AG, and it features a trench emitter architecture, which is combined with a new and innovative cell design. This module is designed to be applied in various power electronics fields such as motor control, welding equipment, photovoltaic inverter and IGBT-based UPS and converters due to its excellent performance. It is an insulated gate bipolar transistor (IGBT) with a single-side cooling device, which has the characteristics of high power insulation, high current capability and low on-state voltage drop. The IRGB5B120KDPBF has a reverse withstand voltage of 1200V, collector-emitter voltage of 1200V, collector current of 120A and a collector-emitter saturation voltage of 2.2V at 25 °C.
The IRGB5B120KDPBF works on the principle of a voltage-controlled device, where when a small current passes through the base-emitter junction of the NPN transistor, this will allow the large current to pass through the collector-emitter terminals. This device works on the principle of a voltage controlled switch, which are well known as thyristors. The IRGB5B120KDPBF also has a high short-circuit current capability and its on-state voltage can be maintained in the range of 0.9 to 1.3V.
Due to its excellent features, it has an excellent thermal transfer property with an excellent package design. The IRGB5B120KDPBF has a low switching loss and offers higher efficiency for the module, due to its insulated gate design, which offers better switching characteristics than conventional bipolar transistors. Furthermore, the IRGB5B120KDPBF feature high current carrying capability and it is capable of operating at high temperatures with a low operating range of up to 250°C. The module also supports up to 25A/mm² of current, which makes it suitable for motor control applications.
The IRGB5B120KDPBF module can be used in a range of power electronics applications, such as motor control, inverters, batteries, solar and photovoltaic inverters, HVAC systems and more. Its low operating temperature, combined with its high current capacity and low switching losses, make it suitable for energy efficient applications, providing users with enhanced power density and improved system reliability. Additionally, the IRGB5BF120KDPBF offers a low conduction loss and over voltage protection, as well as threshold and pull up circuits. Therefore, it is also suitable for power supply and UPS applications.
In conclusion, the IRGB5B120KDPBF is an innovatively designed IGBT module with an excellent package design and good thermal transfer property. It has an excellent current carrying capability and low operating temperature, making it suitable for applications in motor control and other power electronics devices. It also offers excellent switching characteristics for efficient operation and enhanced reliability. This module is suitable for a range of power electronics applications, such as motor control, inverters, photovoltaic inverters and HVAC systems.
The specific data is subject to PDF, and the above content is for reference
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