IRGBF20F Allicdata Electronics
Allicdata Part #:

IRGBF20F-ND

Manufacturer Part#:

IRGBF20F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT FAST 900V 20A TO-220AB
More Detail: IGBT 900V 9A 60W Through Hole TO-220AB
DataSheet: IRGBF20F datasheetIRGBF20F Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 9A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A
Power - Max: 60W
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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The IRGBF20F is an insulated gate bipolar transistor (IGBT) module designed for motor control applications. In this type of device, the single transistor acts like a valve, allowing current to flow across the terminals when it is on. The IRGBF20F has a blocking voltage of 600 V and a repetitive avalanche energy of 10 mJ. It is available in packages with several different pin configurations.The IRGBF20F is used in applications such as motor control, switching power supplies, servo drives, and gate driver circuits. It is a critical component in the operation of these circuits, as it enables the quick switching of large currents and high voltages. When the device is used in an environment with a lot of electromagnetic interference, the speed of switching can be affected by noise. This can cause unstable output, which is why it is important to use IGBTs in these applications.The working principle of an IRGBF20F IGBT module is based on its two main components: the gate and the collector-emitter terminals. When a voltage is applied to the gate, it creates a strong electric field between the collector and the emitter terminals. This electric field is strong enough to push the electrons from the collector to the emitter, creating a current flow. This switching process can happen at very high speeds, as the electric field quickly turns the current on and off.As an IGBT module, the IRGBF20F combines all the advantages of a power transistor, such as high speed switching, low on-state losses, and robust protection. It is a reliable component for motor control and many other applications, and it is often used in place of MOSFETs or BJTs. IGBTs are also far more efficient than their conventional counterparts, as they require much less power to operate.Overall, the IRGBF20F module has a wide range of applications and can be used in a variety of motor control and power supply circuits. Its use of a single transistor gives it switching capabilities that are fast and reliable, while also providing robust protection against noise and other environmental factors. With its many advantages, the IRGBF20F module is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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