IRGB30B60KPBF Allicdata Electronics
Allicdata Part #:

IRGB30B60KPBF-ND

Manufacturer Part#:

IRGB30B60KPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 78A 370W TO220AB
More Detail: IGBT NPT 600V 78A 370W Through Hole TO-220AB
DataSheet: IRGB30B60KPBF datasheetIRGB30B60KPBF Datasheet/PDF
Quantity: 4257
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 4257Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Power - Max: 370W
Switching Energy: 350µJ (on), 825µJ (off)
Input Type: Standard
Gate Charge: 102nC
Td (on/off) @ 25°C: 46ns/185ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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An IRGB30B60KPBF is a power unit (including terminals) used in a metal gate, usually with an inch-thick board and metal casing. It is an IGBT module (insulated-gate bipolar transistor), which is made up of two semiconductor junctions and a gate. This type of transistor is often usd in high power applications, such as AC or DC power systems.

An IRGB30B60KPBF has a Voltage Gate Source rating of 30V, a Gate drain current of up to 60A and a rated output power (around 30000W) in a surface mount package. This type of power unit is ideal for both analog and digital circuits, and can be used to control electric current or voltage up to 150VDC. The transistor module is also environment-friendly and can operate effectively in any temperature range.

The working principle of an IRGB30B60KPBF is based on the IGBT, which is a type of solid-state switch that combines the advantages of both a switched-current and a semiconductor device into a single device. This type of device utilizes insulated gate electrodes, which is a combination of two oppositely-charged semiconductor layers. To turn on the transistor, a voltage must be applied to the gate, which then attracts electrons to the junction where they can partake in charge transfer. As the transistor begins to conduct, it creates a channel between the electrode and the drain, allowing electrons to flow through.

An IRGB30B60KPBF can be used in a wide range of applications, including home appliance control, electrical power plants, light control systems, industrial automation, and automotive electronics. It is an ideal choice for high-voltage and high-current applications. Highly efficient, cost-effective and reliable, this type of transistor module also provides excellent power dissipation for robust performance.

The IRGB30B60KPBF is a reliable, safe and efficient way to provide power in a variety of applications. It is well-suited for use in automotive electronics, industrial automation, light control systems and electric power plants. This single IGBT module provides the power output required, is able to operate effectively in a variety of temperature ranges, and is environmentally friendly. Made up of two oppositely-charged semiconductor layers and a gate, the IRGB30B60KPBF is easy to control and can provide up to 30000W of power in a surface-mount package.

The specific data is subject to PDF, and the above content is for reference

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