Allicdata Part #: | IRGBC30U-ND |
Manufacturer Part#: |
IRGBC30U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT UFAST 600V 23A TO-220AB |
More Detail: | IGBT 600V 23A 100W Through Hole TO-220AB |
DataSheet: | IRGBC30U Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 23A |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 12A |
Power - Max: | 100W |
Input Type: | Standard |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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IRGB30U Application Field and Working Principle
The IRGB30U is a single, insulated-gate bipolar transistor (IGBT) featuring fast switching, low EOFF and low gate charge. It is suitable for use in power switching projects such as electric motor drives, welding machines, and PSU/inverter applications.
The IRGB30U transistor is a type of field effect transistor (FET) that is designed to reduce the switching losses incurred during the conduction cycle. Unlike a traditional thyristor, the IGBT is a free-wheeling transistor, meaning that it can be used to rapidly switch high current, low voltage circuits.
The IRGB30U consists of a source and drain connected by an insulated gate, and the device is constructed using an N-type silicon body and P-type gate electrode. It has a breakdown voltage of 600V and can carry up to 30A at a junction temperature of -55 to 125 degrees Celsius. It has a maximum on-state voltage drop (VCE) of 1.2V and a switching time of 40nsec.
To use the IRGB30U, it must be connected in series with another FET and an appropriate MOSFET driver. The IRGB30U is typically used for low voltage, high current switching, and its unique design allows it to switch quickly without generating a high amount of EMI/RFI noise.
When the series FET is activated, current flows through to the drain of the IRGB30U, turning it on. This causes the junction to drop to its minimum on-state voltage, allowing the current to flow from the source to the drain of the IRGB30U. This current flow enables the device to remain on, even after the original activating FET has been shut off.
When the activating FET is turned off, the IRGB30U\'s insulated gate prevents current from flowing and the device shuts off. This low conduction loss characteristic reduces the amount of heat generated, making the device ideal for high-efficiency power delivery applications.
The IRGB30U has a number of advantages over other types of IGBTs, including a much lower gate charge, meaning that much less power is required to operate. It also has superior turn-off characteristics, providing higher commutation capability. This makes the IRGB30U ideal for use in motor drives, welding machines, UPS systems and other power switching applications.
The IRGB30U is a versatile, cost-effective solution for a range of power switching applications that require fast switching and high efficiency. Its low EOFF and fast switching capabilities make it ideal for applications ranging from motor drives to UPS systems.
The specific data is subject to PDF, and the above content is for reference
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