IRGB4640DPBF Allicdata Electronics
Allicdata Part #:

IRGB4640DPBF-ND

Manufacturer Part#:

IRGB4640DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE 600V 40A TO-220
More Detail: IGBT 600V 65A 250W Through Hole TO-220AC
DataSheet: IRGB4640DPBF datasheetIRGB4640DPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 115µJ (on), 600µJ (off)
Supplier Device Package: TO-220AC
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 89ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 41ns/104ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Current - Collector Pulsed (Icm): 72A
Current - Collector (Ic) (Max): 65A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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IRGB4640DPBF Application Field and Working Principle

IGBTs are insulated gate bipolar transistors that combine the advantages of both MOSFETs (metal–oxide–semiconductor field effect transistors) and bipolar junction transistors (BJTs). IGBTs are widely used in switched-mode power supplies and motor control circuits due to their high-efficiency, low-power loss, and high-voltage capability. The IRGB4640DPBF is a single type IGBT suitable for applications ranging from motor controls, robotics, photovoltaic (PV) systems, wind turbines, power supplies, and power circuits for DC-DC converters.

The IRGB4640DPBF utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which combines the best features of MOSFETs and BJTs. Its internal structure features a four-layer semiconductor construction. Its high collector-emitter voltage (Vceo) of 600V makes it suitable for applications requiring high voltages. It also has a high average current rating of 40A and a total power rating of 30.5W. It has a fast switching speed, low gate driving power requirements, and a built-in ESD clamp for added protection.

The IRGB4640DPBF utilizes a unique design to allow for high conduction current at low gate drive voltages. The device includes two insulated gate FETs (IGFs) connected in parallel, and an integrated BJT connected across the two IGFs. The IGFs form a half-bridge circuit with the BJT controlling the current flow between the IGFs. The IGFs are controlled by an external gate voltage, while the BJT is biased by an internal gate voltage.

The main application of the IRGB4640DPBF are in motor control circuits. It can be used to control the current flow in electric motors, allowing the motor to rotate in different directions or at different speeds. The device also allows for precise control of the motor’s speed and torque. The IRGB4640DPBF can also be used in other applications such as switched-mode power supplies, photovoltaic systems, wind turbines, and power circuits for DC-DC converters.

The IRGB4640DPBF combines the advantages of MOSFET and BJT technologies to create an IGBT that is suitable for high-voltage, high-current applications. Its high Vceo and fast switching speeds make it an ideal choice for motor control and other power applications. Its built-in ESD protection ensures reliable operation and protection from voltage spikes.

In conclusion, the IRGB4640DPBF is a single type IGBT suitable for applications ranging from motor controls, robotics, photovoltaic systems, wind turbines, power supplies, and power circuits for DC-DC converters. Its combination of high Vceo, fast switching speed, low gate driving power requirements, and ESD protection make it an ideal choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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