IRGB4059DPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRGB4059DPBF-ND |
Manufacturer Part#: |
IRGB4059DPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 8A 56W TO220AB |
More Detail: | IGBT Trench 600V 8A 56W Through Hole TO-220AB |
DataSheet: | IRGB4059DPBF Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 56W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 55ns |
Test Condition: | 400V, 4A, 100 Ohm, 15V |
Td (on/off) @ 25°C: | 25ns/65ns |
Gate Charge: | 9nC |
Input Type: | Standard |
Switching Energy: | 35µJ (on), 75µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 4A |
Current - Collector Pulsed (Icm): | 16A |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IRGB4059DPBF is a type of insulated gate bipolar transistor (IGBT) that is used to control and switch high-power electrical devices. The device has a higher current and voltage capabilities than standard bipolar transistor and it is suitable for applications that require high current and high frequency switching. The main features of this IGBT device include fast switching speed, low conduction loss, high blocking capability and high reliability. It is also easy to install and use.
IGBTs are made up of two components: an IGBT and a diode. The IGBT is composed of an emitter, base and collector (N-type semiconductor). The diode is connected to the collector and base terminal. The base of the IGBT acts as a gate for controlling the current flow between the collector and the emitter. When no current is applied to the gate, the diode conducts the current from the collector to the emitter. When a positive voltage is applied to the gate, the IGBT turns on and the diode will become reverse biased. The IGBT will then be able to switch the current from the collector to the emitter.
The IRGB4059DPBF can be used in various applications, including electric motor drives, AC inverters, electric vehicles and solar inverters. It is also commonly used in induction heating applications, electric power converters and power semiconductor control. The device has a high reliability due to its voltage ruggedness and fast switching speed. The conduction loss is low, which makes it suitable for applications that require low power loss.
The working principle of the IRGB4059DPBF is fairly simple. When a positive voltage is applied to the gate, the IGBT will turn on and the conduction between the collector and emitter will become allowed. When the current exceeds a certain voltage, the IGBT will turn off. This process is called a switching cycle and it allows the IGBT to control and switch a high power electrical device.
To sum up, the IRGB4059DPBF is a single IGBT device that can be used to control and switch high power electrical devices. It has high current and voltage capabilities and a fast switching speed. It also has low conduction loss and can be used in various applications such as electric motor drives and AC inverters. The working principle is that when a positive voltage is applied to the gate, the IGBT will turn on, enabling conduction between the collector and the emitter.
The specific data is subject to PDF, and the above content is for reference
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