IRGB4059DPBF Allicdata Electronics

IRGB4059DPBF Discrete Semiconductor Products

Allicdata Part #:

IRGB4059DPBF-ND

Manufacturer Part#:

IRGB4059DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 8A 56W TO220AB
More Detail: IGBT Trench 600V 8A 56W Through Hole TO-220AB
DataSheet: IRGB4059DPBF datasheetIRGB4059DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 56W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 55ns
Test Condition: 400V, 4A, 100 Ohm, 15V
Td (on/off) @ 25°C: 25ns/65ns
Gate Charge: 9nC
Input Type: Standard
Switching Energy: 35µJ (on), 75µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Current - Collector Pulsed (Icm): 16A
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRGB4059DPBF is a type of insulated gate bipolar transistor (IGBT) that is used to control and switch high-power electrical devices. The device has a higher current and voltage capabilities than standard bipolar transistor and it is suitable for applications that require high current and high frequency switching. The main features of this IGBT device include fast switching speed, low conduction loss, high blocking capability and high reliability. It is also easy to install and use.

IGBTs are made up of two components: an IGBT and a diode. The IGBT is composed of an emitter, base and collector (N-type semiconductor). The diode is connected to the collector and base terminal. The base of the IGBT acts as a gate for controlling the current flow between the collector and the emitter. When no current is applied to the gate, the diode conducts the current from the collector to the emitter. When a positive voltage is applied to the gate, the IGBT turns on and the diode will become reverse biased. The IGBT will then be able to switch the current from the collector to the emitter.

The IRGB4059DPBF can be used in various applications, including electric motor drives, AC inverters, electric vehicles and solar inverters. It is also commonly used in induction heating applications, electric power converters and power semiconductor control. The device has a high reliability due to its voltage ruggedness and fast switching speed. The conduction loss is low, which makes it suitable for applications that require low power loss.

The working principle of the IRGB4059DPBF is fairly simple. When a positive voltage is applied to the gate, the IGBT will turn on and the conduction between the collector and emitter will become allowed. When the current exceeds a certain voltage, the IGBT will turn off. This process is called a switching cycle and it allows the IGBT to control and switch a high power electrical device.

To sum up, the IRGB4059DPBF is a single IGBT device that can be used to control and switch high power electrical devices. It has high current and voltage capabilities and a fast switching speed. It also has low conduction loss and can be used in various applications such as electric motor drives and AC inverters. The working principle is that when a positive voltage is applied to the gate, the IGBT will turn on, enabling conduction between the collector and the emitter.

The specific data is subject to PDF, and the above content is for reference

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