IRGB4607DPBF

IRGB4607DPBF application field and working principle

The IRGB4607DPBF is an isolated gate bipolar transistor (IGBT) of the single module family, designed for industrial power applications with higher power and current ratings. This module is ideally suited for operation in industrial AC drives, inverters, welding power supplies and other high power switching systems.

This module is available in the To-247 form factor, with a wide range of voltage ratings and current ratings. It has a three terminal configuration, with the collector being connected to the source to provide increased current capacity when compared to MOSFETs.

The IRGB4607DPBF utilizes a special design of insulated gate transistor which utilizes its collector as a gate to create a voltage drop across the transistor under current flow. This design reduces power losses and increases the efficiency of the device. The insulated gate transistor does not require a separate gate drive circuit to function, thus reducing the cost and complexity associated with the circuit.

The IRGB4607DPBF can be used in a variety of power applications, including motor controls, drives, power conversion, motor control and other high power switching processes. This device is designed for high speed switching, with fast rise and fall times, and provides high current, low on-state resistance, fast switching, low switching losses, low dV/dt, and low static and dynamic power losses.

The IRGB4607DPBF operates in the voltage range of 600V to 1400V and power output of 200W to 400W. It has a collector emitter voltage (Vce) of 1.5V, a gate-emitter voltage (Vge) of 10V, and a switching speed of 1µs per µA. The device is capable of operating at frequencies up to 10kHz. The device has an ambient junction temperature of -40°C to 85°C and a junction to case thermal resistance of 0.3°C/W.

The IRGB4607DPBF employs trench insulated gate bipolar transistor technology, which provides faster switching, lower switching losses and higher avalanche energy. This technology also offers higher avalanche energy for improved system robustness. The device features low EMI and low dV/dt for improved noise suppression and better system performance. The IRGB4607DPBF also features under voltage lock out (UVLO) protection, over current protection and short circuit protection.

In summary, the IRGB4607DPBF is a single module insulated gate bipolar transistor designed for high current applications requiring excellent efficiency, fast switching speed and low dV/dt noise. It is ideal for use in a wide range of applications, including motor control, drives, power conversion, motor control and other high power switching processes. This device offers higher power, faster switching, low switching losses and increased noise suppression.