Allicdata Part #: | IRGB30B60K-ND |
Manufacturer Part#: |
IRGB30B60K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 78A 370W TO220AB |
More Detail: | IGBT NPT 600V 78A 370W Through Hole TO-220AB |
DataSheet: | IRGB30B60K Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Power - Max: | 370W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 46ns/185ns |
Gate Charge: | 102nC |
Input Type: | Standard |
Switching Energy: | 350µJ (on), 825µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 78A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Introduction
The IRGB30B60K is an insulated gate bipolar transistor (IGBT), which is a type of power electronic switching device. An IGBT is a semiconductor device combining the properties of a MOSFET (metal-oxide-semiconductor field-effect transistor) and bipolar junction transistor (BJT). The development of IGBT technology has made it possible for engineers to produce devices offering better power efficiency, higher switching frequencies, and lower on-state voltage drop. This article will focus on the application field and working principle of the IRGB30B60K.
Applications
IGBTs, like the IRGB30B60K, are primarily used in power electronic systems, either as a switch or as an amplifier. They are particularly well suited for applications that require fast switching at high power levels. Examples include motor control drives, UPS systems, switch mode and high-voltage power supplies, motor starters, home appliances and more. IGBTs are also commonly used in renewable energy systems such as wind turbines, solar energy systems and electric vehicles.
Device Structure and Working Principle
The IRGB30B60K is a single IGBT on a single chip, consisting of two N-channel MOSFETs and one P-N junction gate. A tape gate is used to control the switching of the IGBT, as well as its gate voltage. The gate voltage controls the on/off state of the IGBT, with a higher gate voltage enabling the device to conduct current. When the IGBT is off, the gate voltage is usually below the breakdown voltage of the device. When the IGBT is on, the gate voltage is usually greater than the threshold voltage of the device. When the IGBT switches, it conducts current only when the gate voltage is greater than the breakdown voltage.
Performance Advantages
The IRGB30B60K offers a number of advantages over traditional IGBTs. Interested customers should be aware of the improved performance of this IGBT. It offers higher current and voltage ratings, improved frequency response capabilities, reduced switching losses, and a higher reverse current capability than other similar IGBTs. This makes the IRGB30B60K suitable for applications requiring high-power and fast switching.
Conclusion
To summarize, the IRGB30B60K is a single insulated gate bipolar transistor (IGBT) device, suitable for applications requiring high-power and fast switching. It has a wide range of applications in power electronic systems, such as motor control drives, UPS systems, switch mode and high-voltage power supplies, motor starters, home appliances and more. The device also offers improved frequency response capabilities, reduced switching losses, and a higher reverse current capability than other similar IGBTs.
The specific data is subject to PDF, and the above content is for reference
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IRGB30B60K | Infineon Tec... | 0.0 $ | 1000 | IGBT 600V 78A 370W TO220A... |
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