IRGB4B60KD1PBF

Power - Max:	63W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	93ns
Test Condition:	400V, 4A, 100 Ohm, 15V
Td (on/off) @ 25°C:	22ns/100ns
Gate Charge:	12nC
Input Type:	Standard
Switching Energy:	73µJ (on), 47µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 4A
Current - Collector Pulsed (Icm):	22A
Current - Collector (Ic) (Max):	11A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Last Time Buy
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Transistors - IGBTs - Single

The IRGB4B60KD1PBF belongs to the family of compact, single-package insulated gate bipolar transistors (IGBTs). These transistors use low-on-voltage, low-on-state resistance and low-output capacitance to provide improved device performance. IGBTs have traditionally been used in applications such as heavy load drives, UPS systems and HID lighting drivers. The new IRGB4B60KD1PBF has several enhancements compared to standard IGBTs, including a lower on-state resistance (RDS) and lower gate charge (QG).

Application Field

The IRGB4B60KD1PBF is well-suited for applications requiring high efficiency and excellent power output. This transistor can be used for both high-power switching and linear amplifier applications. It has been designed for use in a wide range of devices, from high-efficiency motor drives to mid-power motor controls, as well as UPS systems and HID lighting drivers.This IGBT is designed to perform well in switching and low-noise audio amplifier applications, as well as applications in harsh environments. Additionally, the low-output capacitance and high current density of the IRGB4B60KD1PBF make it suitable for use in high-power switching circuits.

Working Principle

An IGBT is a three-terminal power semiconductor device with an insulated-gate electrode. It is a cross between a power MOSFET and a bipolar transistor, combining the best features of both devices. When a voltage is applied at the gate electrode, the power MOSFET conducts, allowing the current flow between the source and drain terminals.The basic operating principle of the IRGB4B60KD1PBF is that by applying a positive voltage to the gate, the device is turned on, allowing current to flow. When the gate voltage is reversed, the IGBT will turn off, terminating the current flow.The device\'s low-on-state voltage, low-on-state resistance and low-output capacitance also contribute to improved performance. The gate charge is optimized for low-noise switching, allowing for faster switching and more efficient operations.

Conclusion

The IRGB4B60KD1PBF is a high-efficiency single-package insulated gate bipolar transistor (IGBT) designed to provide improved device performance in a wide range of applications. Its low-on-state voltage, low-on-state resistance and low-output capacitance make it ideal for use in high-power switching and linear amplifier applications, as well as in harsh environments. The IGBT can be used for both high-power switching and low-noise audio amplifier applications. Additionally, its gate charge is optimized for low-noise switching, allowing for faster switching and more efficient operations.

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