IRGB4062DPBF

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	48A
Current - Collector Pulsed (Icm):	72A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 24A
Power - Max:	250W
Switching Energy:	115µJ (on), 600µJ (off)
Input Type:	Standard
Gate Charge:	50nC
Td (on/off) @ 25°C:	41ns/104ns
Test Condition:	400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr):	89ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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IntroductionThe IRGB4062DPBF is a single IGBT transistor designed and manufactured by International Rectifier. It is designed for use in power electronics such as power switches, motor control, and UPS systems. The device features low RDS(on) for high current handling and a 400 V blocking voltage rating, making it suitable for a wide variety of applications. This article will discuss the IRGB4062DPBF\'s application field and working principle. Application FieldThe IRGB4062DPBF is a versatile single IGBT ideal for applications that require a high-current rating and low RDS(on). It is suitable for many power electronic applications, such as electronic motor control (inverter, switched reluctance, and permanent magnet motors), UPS, solar power inverters, renewable energy switching, and induction heating, among others.The IRGB4062DPBF can be used in variable speed timing applications, and its performance can be enhanced when combined with IR\'s iMOTION and ActiveFront-End solutions. IR\'s ActiveFront-End solutions are specifically designed to reduce AC line current distortion and improve the reliability of the entire power system.The device\'s low RDS(on) reduces power dissipation and enables the device to run cooler, providing higher efficiency and reliability. The device also features a high dv/dt rating, which allows for faster switching and improved efficiency in high-frequency applications. Working PrincipleAn IGBT is a three-terminal switching element consisting of two distinct devices - an NPN bipolar junction transistor (BJT) and an insulated gate field effect transistor (IGFET). The BJT is used as a current controlled switch, and the IGFET is used as a voltage controlled switch. When the device is in the off-state, no current flows through the device. In the on-state, a small current is passed through the device, and the resulting gain of the device (RDS(on)) allows it to control the load current. To turn on the device, a positive voltage is applied to the gate terminal. This voltage causes the gate-source voltage to exceed the threshold voltage, which allows electron carriers to flow across the P-N junction, turning on the device. The device remains on until the gate voltage is reduced back to the device\'s threshold voltage.The device is protected from short circuits and high voltages by a current limiting gate resistor and a reverse blocking diode. The current limiting gate resistor prevents overcurrents from damaging the device, and the reverse blocking diode prevents the device from suffering damage from large negative voltages.ConclusionThe IRGB4062DPBF is a versatile single IGBT ideal for power electronic applications that require high current ratings and low RDS(on). The device features a 400 V blocking voltage rating, a low dv/dt rating, and a current limiting gate resistor, which protects it from short circuits and high voltages. It is suitable for many applications such as motor control, UPS, and solar power inverters. The device\'s working principle is based on a combination of NPN BJT and IGFETs as current and voltage controlled switches, respectively.

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