IRGB8B60KPBF

Power - Max:	167W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 5A, 100 Ohm, 15V
Td (on/off) @ 25°C:	23ns/140ns
Gate Charge:	18.2nC
Input Type:	Standard
Switching Energy:	160µJ (on), 160µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 8A
Current - Collector Pulsed (Icm):	26A
Current - Collector (Ic) (Max):	28A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Last Time Buy
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to IRGB8B60KPBF

IRGB8B60KPBF is an Insulated Gate Bipolar Transistor (IGBT) from International Rectifier, a company specializing in the production of innovative power management solutions. It is a part of the company’s popular Insulated Gate Bipolar Transistor (IGBT) family.IGBTs are power semiconductor devices used in switching and power control applications. They have some features in common with both bipolar and MOSFET devices and combine the best of both worlds to meet the most demanding applications.

Application Field and Working Principle

IRGB8B60KPBF is a single-phase Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 600V and a current rating of 8A. It is well-suited for AC motor drive applications, motor control, UPS, solar inverter, etc.The IRGB8B60KPBF’s working principle is based on the IGBT\'s ability to quickly switch from conducting to non-conducting states and vice versa. The IGBT’s insulated gate conducts from its Collector to the Emitter and then to its other Collector only when the gate voltage has exceeded its breakover voltage. This allows the IRGB8B60KPBF to provide excellent performance, efficiency and power density for efficient power control.The device has a maximum collector current rating of 8A for continuous operation, a maximum breakdown voltage rating of 600V, and a minimum on-state collector to emitter saturation voltage (VCE (sat)) of 1.9V at 10A. The IGBT also features short-circuit protection and latch-up immunity aiding in the system stability and protection of the device as well as its driver.

Advantages of IRGB8B60KPBF

The IRGB8B60KPBF offers a number of advantages, including:- High voltage rating of 600V and collector current rating of 8A for continuous operation - Low operating frequency of up to 25KHz and low on-state voltage (VCE) - High current density, excellent reliability and wide temperature range - Short-circuit and latch-up protection, aiding in its stability and protection of the device - High efficiency and power density makes it ideal for applications such as motor control, solar inverters, uninterruptible power supplies (UPS), etc.

Conclusion

Insulated Gate Bipolar Transistors (IGBTs) have a number of advantages compared to both bipolar and MOSFET devices offering a unique combination of their best characteristics. The IRGB8B60KPBF is a single-phase IGBT from International Rectifier with a voltage rating of 600V and current rating of 8A. Its applications include AC motor drive, motor control, solar inverter, and uninterruptible power supplies (UPS). Its advantages include a high voltage rating, low operating frequency and VCE, high current density, excellent reliability, wide temperature range, and high efficiency.

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