IRGBC30S

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	34A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 18A
Power - Max:	100W
Input Type:	Standard
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction to IRGBC30S Application Field and Working Principle

The IRGBC30S is an integrated gate bipolar transistor (IGBT) module, specifically designed for applications such as induction heating, solar, and electric traction. This particular IGBT module is capable of handling high power and high voltage applications, making it a useful tool for power- and energy-intensive technologies. To better understand the application field and working principle of the IRGBC30S, we will break it down into two main components: the IGBT and the diode.

The IGBT Component

The IGBT component of the IRGBC30S is an insulated gate bipolar transistor. An IGBT is a three-terminal power electronic device, in which one of the terminals is typically used as the control input, while the other two provide the device\'s load current. The IGBT has the benefits of both MOSFET and bipolar transistors; it has the high impedance control capabilities of a MOSFET and the high-current and voltage capabilities of a bipolar transistor. Thus, IGBTs are particularly useful for high-power applications, as they can handle loads of up to 600V and up to 600 A. When the IRGBC30S module is applied to a circuit, the IGBT component operates using the principle of "gate control". This is a type of energy-switching mechanism, in which the gate-to-source voltage of the IGBT is used to switch the device between "on" and "off" states. When the gate voltage is high (close to the source voltage) the IGBT is in the "on" state, and when the gate voltage is low (close to ground), the device is in the "off" state. Additionally, the IGBT has very low on-state current losses and extremely low gate capacitance, allowing it to quickly switch between its two states.

The Diode Component

The second component of the IRGBC30S module is the diode. The diode is a two-terminal device, which allows the flow of current in one direction only. This particular diode is a particularly useful tool in power- and energy-intensive technologies, as it is able to handle very high voltage and current applications. The diode operates on the following principle: when the positive or the negative voltage reaches a certain threshold (or "cut-off" voltage), the diode will start to conduct, allowing current to pass through it. Conversely, when the voltage falls below the cut-off, the diode will block the current, avoiding any damages to the circuit. The diode also helps to protect the IGBT module from excessive power levels or overvoltage conditions, ensuring a longer lifetime of the module.

Conclusion

The IRGBC30S module is an IGBT module designed for high-power applications. It is composed of an IGBT component and a diode component which together enable energy-switching between "on" and "off" states, offering high voltage and current capabilities and low power losses. The diode component helps to protect the IGBT module from excessive power levels or overvoltage conditions, ensuring a longer lifetime of the module.

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