IRGB4061DPBF

Power - Max:	206W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	400V, 18A, 22 Ohm, 15V
Td (on/off) @ 25°C:	40ns/105ns
Gate Charge:	35nC
Input Type:	Standard
Switching Energy:	95µJ (on), 350µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 18A
Current - Collector Pulsed (Icm):	72A
Current - Collector (Ic) (Max):	36A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to IRGB4061DPBF

The IRGB4061DPBF is a higher-power, insulated-gate bipolar transistor (IGBT) with fast gate control and high temperature capability. It is suitable for use in switching mode power supplies, motor drives, and power management applications. This IGBT features low forward voltage drop and fast switching times, allowing for high power density and greater efficiency in power conversion applications. The IRGB4061DPBF can also provide immunity to electrical noise and transient voltages, enhancing its switching characteristics and performance.

Features

The IRGB4061DPBF is an Insulated Gate Bipolar Transistor (IGBT) designed to provide high power and temperature capability while maximizing performance and efficiency. The features of this IGBT include:- Low forward voltage drop: The typically low threshold voltage of the IRGB4061DPBF makes it especially attractive for use in high-power switching applications.- Fast switching times: The IRGB4061DPBF has a typically fast turn-on time of just 75 ns, making it excellent for applications that require fast dynamic response.- High temperature capability: The IRGB4061DPBF has a maximum operating temperature of 150°C, making it suitable for applications with high ambient temperatures.- Low Gate charge: The low gate charge of the IRGB4061DPBF makes it suitable for applications that require low static power dissipation.

Application Field and Working Principle

As an insulated gate bipolar transistor (IGBT), the IRGB4061DPBF can be used in power conversion applications that require fast switching speed and high power density. Some applications that benefit from the features of the IRGB4061DPBF include switching mode power supplies, motor drives, and power management applications.The working principle of an IGBT, such as the IRGB4061DPBF, is based on the principles of both a bipolar junction transistor and a field-effect transistor. Like a bipolar junction transistor, the IGBT has a base, an emitter and a collector. Like a FET, the IGBT has two insulated gates: a control gate and an emitter gate. When the control gate is open, current can flow from the emitter to the collector. By controlling the voltage applied to the control gate, the current flow can be switched on and off. This allows for fast switching times, high power density, and efficient power conversion.

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