IRGB4710DPBF Allicdata Electronics
Allicdata Part #:

IRGB4710DPBF-ND

Manufacturer Part#:

IRGB4710DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V TO220 COPAK
More Detail: IGBT
DataSheet: IRGB4710DPBF datasheetIRGB4710DPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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IRGB4710DPBF is a high-voltage insulated-gate bipolar transistors (IGBTs) produced by Infineon Technologies. Single-chip constructions enable lower capacitance and higher switching performances. With a powerful gate charge driving ability, this IGBT is suitable for use in power switching applications. It offers superior electrical performance in terms of fast switching and high current capability, making it ideal for a wide variety of applications in different market segments.

This package includes a drain, a collector, and a gate insulated from each other. The main feature of this device is that it works at a high voltage, up to 700 V, while being able to handle a relatively high current. It is suitable for a variety of applications such as dc-dc converters, solar inverters, AC motor drives, and other power electronic products.

In power switching applications the IGBTs offer a high operating voltage, high switching performance, and low on-resistance. This makes them an ideal choice for power electronic products, as well as for energy storage systems. The IGBT can provide very fast switching times, which can significantly reduce system power consumption and improve system reliability. As an added bonus, it also offers extremely low noise emission, making it a great choice for applications that require clean and quiet operations.

The IRGB4710DPBF works on the principle of semi-conduction. It is a triode device in which the base of the transistor is the gate. When the gate is activated, charge carriers are created in the substrate, allowing electrons to flow between the emitter and collector. This current flow causes a voltage drop across the collector and emitter, generating an electric field that can be used to control the operation of an external device. Due to its high voltage operation and low on-resistance, the IGBT can also be used in a variety of power switching applications.

The IRGB4710DPBF offers a wide range of features and benefits for power switching applications. It has a fast switching time and a low on-resistance value, which means that it can reduce system power consumption and improve system reliability. The IRGB4710DPBF is designed to work reliably in very dense and complex environments, making it suitable for high-density applications. Additionally, it offers very low noise emission and can be used in applications that require clean and quiet operations. It is also relatively small in size, which makes it ideal for space-saving applications.

In conclusion, the IRGB4710DPBF is an ideal solution for applications that require high voltage operation and low on-resistance. It has fast switching times and low noise emmissions, making it a great choice for power switching and energy storage systems. It is also relatively small in size, making it ideal for space-saving applications. With its wide range of features and benefits, the IRGB4710DPBF is sure to be a great choice for all your power switching needs.

The specific data is subject to PDF, and the above content is for reference

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