IRL6372PBF Allicdata Electronics
Allicdata Part #:

IRL6372PBF-ND

Manufacturer Part#:

IRL6372PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 30V 8.1A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surfac...
DataSheet: IRL6372PBF datasheetIRL6372PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Base Part Number: IRL6372PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRL6372PBF is a power MOSFET array consisting of two single N-Channel enhancement MOSFETs. It uses an industry-standard SOIC-8 surface mount package. The IRL6372PBF features low RDS(on) and fast switching characteristics. Due to its low power loss, it is well suited for high frequency switching applications.

The two MOSFETs in the IRL6372PBF are stacked together in a single package and are connected in parallel, thus providing two functionally independent circuits, each controllable by their own gate. The base package of the IRL6372PBF features two parallel N-Channel enhancement MOSFETs with a single common gate electrode and two gate output terminals. The common gate electrode is connected to an external control terminal, enabling the simultaneous control of both transistors. The IRL6372PBF is designed for applications requiring low resistance across the drain-to-source paths and fast switching time.

The IRL6372PBF can be used in a variety of applications. It can be used in DC or AC power conversion circuits, motor control circuits, motor speed control circuits, switched mode power supply circuits, and power factor correction circuits. It can also be used in amplifier feedback and isolation circuits, high frequency switch mode converters, LED display functioning, and automotive electronics. The IRL6372PBF also has applications in telecom, medical, and industrial systems.

The working principle of the IRL6372PBF is based on the operation of a MOSFET. A MOSFET is a transistor that consists of three terminals: the gate, the source, and the drain. A voltage applied to the gate terminal creates an electric field that changes the resistance between the source and drain terminals. This change in resistance is what allows current to flow between the source and drain terminals when a voltage is applied. The IRL6372PBF uses two MOSFETs that are stacked together, allowing both of them to be switched simultaneously by applying a single voltage to their common gate. The IRL6372PBF has a low RDS(on) and fast switching characteristics, making it suitable for high frequency switching applications.

In conclusion, the IRL6372PBF MOSFET array is a powerful component that can be used for a variety of applications. It is designed with low on-state resistance and fast switching capabilities, making it suitable for high frequency switching applications. The IRL6372PBF is widely used in power conversion circuits, motor control circuits, and telecom, medical, and industrial systems.

The specific data is subject to PDF, and the above content is for reference

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