Allicdata Part #: | IRL620SPBF-ND |
Manufacturer Part#: |
IRL620SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 5.2A D2PAK |
More Detail: | N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | IRL620SPBF Datasheet/PDF |
Quantity: | 235 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRL620SPBF is a n-channel enhancement mode power field-effect transistor (FET) that is built using a specifically-designed, advanced field-stop process intended for the use in maximum power switching applications such as DC-DC conversion, DC-AC conversion and high-frequency switching. It is equipped with a resistor, a gate oxide, a gate electrode and source/drain electrodes. The IRL620SPBF is housed in a TO-220 package that is designed to withstand a high temperature operation and to ensure that high power devices are as reliable as possible.
In terms of application field, the IRL620SPBF has numerous advantages. This device can be used in many power-management circuits such as DC-DC converters, DC-AC power supplies, switching converters, regulator circuits, and more. It is also ideal for high-frequency and high-current switching applications. Additionally, it can also be used in applications such as chopping circuits and motor control.
The working principle of IRL620SPBF is based on a field-effect transistor (FET). It consists of a gate electrode, a gate oxide, a resistor, and source/drain electrodes. When a voltage is applied to the gate oxide, a potential barrier is created, which traps the electrons at the junction between the gate oxide and the resistor. This causes a current to flow through the transistor. The current is then directed to the source and drain electrodes, which control the voltage and current at the transistor. The ratio of the current flow to the voltage applied is called the transmission coefficient of the device, which is determined by parameters such as the doping concentration, channel length, channel width and gate oxide thickness.
The IRL620SPBF is an incredibly versatile device, offering outstanding performance in a variety of applications. It is designed to withstand high temperatures and can reliably provide extremely high currents and voltages. Its versatile nature, along with its advanced field-stop process, makes it an ideal choice for many high power applications.
The specific data is subject to PDF, and the above content is for reference
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