IRL60HS118 Discrete Semiconductor Products

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IRL60HS118 is a high-speed power MOSFET transistor manufactured by International Rectifier Corporation which targets output switching applications. It is suitable for synchronous buck applications in both computing and consumer markets. This device operates in depletion mode and is available in TO-220AB and D2PAK package.

The MOSFET transistor is based on the source follower topology and is ideal for low-voltage and high-frequency switching operations. The IRL60HS118 has a maximum drain current of 60 A at a 10V drain-source voltage. Its drain-source resistance is low and its output capacitance is very low which enables fast switching performance. It also has excellent temperature performance over a wide operating temperature range.

This power MOSFET transistor is designed for applications where efficiency and reliability are important considerations. Due to its low gate charge, low gate resistance, and low input and output capacitance, the IRL60HS118 is able to provide high efficiency and fast switching while also reducing power consumption and power dissipation. It is also suitable for a variety of applications, including switching power supplies, high-efficiency dc/dc converters, PV inverters, motor drive systems, and power management.

The working principle of the IRL60HS118 is based on the source follower topology. This is a type of voltage-controlled device whereby the output voltage is kept in proportion to the voltage at the gate. When a voltage is applied to the gate, electrons are pulled out of the source and migrate to the drain, thus creating an electrical current. This current, in turn, flows through the device and is used as the output. The advantage of this arrangement is that the output voltage is virtually independent of the load, making it ideal for applications that require fast switching and high efficiency.

The IRL60HS118 has a good frequency response and can operate at switching speeds up to 4 million times per second. The device also offers excellent thermal derating to ensure it does not overheat when operated at high switching speed. In addition, it has an excellent temperature performance and is ideal for low-power and low-voltage applications. It also has a low gate-to-drain capacitance, which helps improve switching performance.

In conclusion, the IRL60HS118 is an ideal power MOSFET transistor for applications requiring switching performance, efficiency, and reliability. Thanks to its low gate charge, low gate resistance, and low input and output capacitance, it is able to provide high efficiency and fast switching while also reducing power consumption and power dissipation. Furthermore, its temperature performance over a wide operating temperature range makes it suitable for a variety of applications. Lastly, its source follower topology ensures that the output voltage is kept in proportion to the gate voltage, making it ideal for applications that require fast switching and high efficiency.

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