Allicdata Part #: | IRL640STRL-ND |
Manufacturer Part#: |
IRL640STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 17A D2PAK |
More Detail: | N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surfa... |
DataSheet: | IRL640STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL640STRL is a type of field effect transistor (FET) which is a single, ultra-fast transistor designed to work efficiently in high power applications. The IRL640STRL provides low input and output capacitance, excellent switching speed, and high average current drain. It is used for applications such as voltage conversion, DC/DC converter, saturated amplifier, digital integrated circuit driver, and high frequency switching. The IRL640STRL is a P-channel MOSFET (mosfet), which means that the gate controls the current flow between the source and drain terminals. The advantages of this type of transistor are its low power consumption, low noise, and fast switching expectations.
The IRL640STRL is constructed on an oxide semiconductor layer and contains several layers of material. These layers provide the application with many benefits, such as reverse diode protection, increased power handling capability and increased frequency response. The device consists of a drain, source, and gate terminal. The drain and source are connected to the load, and the gate terminal receives the input signal. The gate regulates the current flow between the drain and source. When a voltage is applied to the gate, the device turns on and allows current to flow through. When the voltage is removed, the device turns off and the current stops flowing.
The working principles of the IRL640STRL are based on the capacitive nature of field effect transistors. The device utilizes the capacitive gate-to-drain, the gate-to-source, and the gate-to- substrate capacitances to regulate the movement of electrons between the source and drain regions. These capacitors provide the device with the ability to respond quickly to changes in input signals. As a result, the IRL640STRL is capable of switching quickly between various levels of voltages.
The IRL640STRL is used in a variety of applications, including high frequency switch-mode power supply, high frequency DC/DC converter, and audio amplifier applications. It is well-suited for applications requiring high voltage and current gains with minimal switch-on and off times. The device can also be used as a driver for CMOS logic and other digital circuits. Additionally, it can be used as a driver for transistors, Darlington pair and motor drivers.
In conclusion, the IRL640STRL is a single, ultra-fast transistor designed for high power applications. The device is constructed on an oxide semiconductor layer and utilizes capacitive gate-to-drain, gate-to-source, and gate-to- substrate capacitances to provide excellent switching speed and power handling capability. The device is suitable for a variety of applications due to its fast switching expectations, low power consumption and low noise characteristics.
The specific data is subject to PDF, and the above content is for reference
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