IRL640STRLPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 10A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

IRL640STRLPBF is a n-channel field-effect transistor, which belongs to the group of powermetal-oxide-semiconductor field-effect transistors (MOSFETs) and specifically to their single-gate variant. This type of MOSFET is composed of two MOSFETs, with one MOSFET providing a high-side and low side current path in the same package. Thus, this single transistor is able to offer a simplified system application with improved performance, as compared to using two separate MOSFETs. In regards to its application fields, the IRL640STRLPBF is commonly used in a variety of electronic devices and systems, while its working principle will be discussed in detail in this article, as well.

Application Field

As mentioned previously, the IRL640STRLPBF is usually employed in a broad range of electronic devices, where it is tasked with providing a low and high-side power path. The most common fields of application for this MOSFET include power management, motor control, and RF power systems, due to its low on-resistance and capability of providing low and high-side currents simultaneously in the same package. Not only is it also used in applications that require wide frequency range and low power loss, for example in lighting and other appliances, but it is also used in automotive and computer products, as well.

Working Principle and Technical Characteristics

MOSFETs, in general, rely on the effect of the electric field in order to select the flow of current between source, drain and gate. Their working principle is based on four conducting levels based on the flow of electrons; when the drain and source are provided with a voltage, another voltage is used in order to control the gate voltage and thus combined with it, the current flowing between source and drain. The flow of a current commonly results in heat, so the IRL640STRLPBF also comes with a thermal protection feature against overloading; in this way, it is not only able to protect the device from overheat or excessive currents, but it is also able to provide a greater efficiency and reliability to the system application. In terms of its technical characteristics, the IRL640STRLPBF is considered to be an enhancement type power MOSFET, its on resistance (both low side and high side) being around 0.50 Ohms. It reaches a maximum drain-source voltage of 600 V, must be operated between -55°C and 175°C temperatures and its gate-to-source voltage is 5 V. Additionally, it can handle peak powers up to 4.0 W and package specific power dissipation of 4.0 W.

Conclusion

In conclusion, the IRL640STRLPBF is a type of single-gate n-channel MOSFET which is commonly employed in power-electronic devices, aiming to provide a simplified application system and a low power loss in lighting and other appliances. Its working principle is based on four conducting levels and on the effect of the electric field in order to control the current flow. Technically, the IRL640STRLPBF is an enhancement type power MOSFET with an on resistance of 0.50 Ohms and several features such as thermal protection and a gate-to-source voltage of 5 V.

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