IRL640L

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The IRL640L is a single trench-gate, low-side MOSFET designed to be used in diverse applications. It is designed to be used in medium voltage applications, such as motor control and power conversion. This power device is capable of switching currents up to 60 A and features a dynamic on-resistance of 11 mΩ.

Overview

The IRL640L is a low-side power MOSFET designed to provide power switching in medium voltage applications. It has a maximum voltage rating of 100 V and a maximum current rating of 60 A. This device can be used in a variety of applications including motor control, switch mode power supplies, light emitting diode lighting, and robotics. It is capable of providing efficient and reliable switching performance for high current loads.

Design Features

The IRL640L is a single trench-gate MOSFET with a maximum on-state resistance of 11 mΩ. It has a drain-to-source breakdown voltage of 100 V and a drain-to-gate capability of 20 V. This device has a typical gate charge of 25 nC and a typical gate capacitance of 7.2 pF. It is constructed with a metal-oxide semiconductor field-effect transistor (MOSFET) structure.

Applications

The IRL640L is suitable for a wide range of applications. It is often used for motor control, such as in dc brushless motors, and power conversion in voltage regulators, dc-dc converters, and ac-dc power supplies. It can also be used in light emitting diode lighting, robotics, and other applications requiring high current loads. The IRL640L is also suitable for automotive applications, such as electric vehicle propulsion and charging systems.

Working Principle

The IRL640L is a FET-type device that operates on the concept of electrostatic control. The device has two terminals, the source and the drain, and is connected to a control element, the gate. When a voltages is applied to the gate, it creates an electric field between the gate and the source that enables current to flow through the device. The amount of current that can flow depends on the resistance between the source and the drain or the "on-state resistance" of the device.

The IRL640L is designed to operate over a wide range of temperatures, from -55°C to 175°C. It is also capable of dissipating up to 47 W of power. The MOSFET structure and the low on-state resistance make the IRL640L an ideal device for high current applications. It provides efficient and reliable switching performance for power conversion and motor control.

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