IRL640STRR

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The IRL640STRR is a popular power MOSFET from International Rectifier Corporation, and is utilized in a diverse range of applications. Manufactured with advanced trench technology, the IRL640STRR is an ideal choice for high-current switching applications thanks to its lower on-state resistance and fast switching speeds. This article will explore the various applications and working principles behind the IRL640STRR power MOSFET.

The IRL640STRR power MOSFET is designed and developed have the technical specifications best suited to its most frequent applications, where low on resistance and fast switching speeds are key factors. For instance, this power MOSFET is suitable for programs that require switching of loads up to 55A in a compact and space-saving fashion. Other electrical specs include an RDS(on) of 6.4mΩ and diode reverse recovery time of 35ns.

As a result, the IRL640STRR is suitable for use in a vast number of applications, including AC and DC motor control, LED lamp driver, LED power supply, UPS power supply, DC/DC converter and other general purpose circuit designs. When switching AC loads, the IRL640STRR power MOSFET can handle up to 55A with a load voltage close to 600V. Similarly, when switching DC loads, the IRL640STRR is also capable of handling up to 55A with a load voltage close to 400V.

The IRL640STRR power MOSFET leverages the principle of depletion-mode MOSFETs and operates by two distinct mechanisms: pinch-off and generation of the inversion layer. The pinch-off principle is achieved when the voltage Vgs exceeds the threshold voltage Vth, and electrons are “pinched-off” by the electric field at the channel. The amount of electrons transmitted depends on the applied voltage. This is the main mechanism that is responsible for the low on-state resistance and fast switching speed of this power MOSFET.

Once the gate voltage Vgs reaches a sufficiently high level to pinch-off the channel, another principle kicks in: the generation of the inversion layer. This is achieved when the voltage Vgs reaches greater values, causing the electrons to accumulate in the oxide layer and forming the inversion layer. The two effects combined, the pinch-off of the majority carriers and the inversion layer, result in the unique performance characteristics of the IRL640STRR power MOSFET.

In conclusion, the IRL640STRR power MOSFET is an ideal choice for various high-current switching applications, such as AC and DC motor control, LED lamp driver, LED power supply, UPS power supply, DC/DC converter and other general purpose circuit designs. The lower on-state resistance and faster switching speeds are achieved by the application of two principles: pinch-off and generation of the inversion layer. This makes the IRL640STRR a reliable and efficient choice for precise power switching applications.

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