IRL620STRL

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The IRL620STRL is a transistor belonging to the silicon-field-effect transistor (FET) family that is designed for power switching applications. It is a single n-channel enhancement-mode field-effect transistor (FET), which is a unipolar transistor that utilizes an electric field to control the conductivity of a channel, instead of base current control like with a traditional bipolar transistor. As a single-channel FET, it is designed such that all current flow is confined to a single, n-channel substrate in the device.

The IRL620STRL utilizes a parasitic-bipolar effect over the n-channel substrate, making the device suitable for higher voltage operation. Additionally, the low-side characteristic of the channel gives this device a shallow source-drain resistance curve, allowing for higher current operation. The IRL620STRL also features an improved avalanche capability, due to the use of a large surface-to-volume ratio, helping improve its ability to handle high-power switching applications.

The IRL620STRL is a highly efficient device, with a total gate-to-source capacitance of just 10 pF, making it suitable for high-frequency power switching applications. Additionally, because of its lateral n-channel FET construction, the IRL620STRL is also very space efficient, measuring only 2.6 mm2. This makes it ideal for applications that require maximum efficiency and space savings.

A key component of a FET’s function is the gate-source voltage (VGS), which is used to apply a discrete voltage across the gate-source terminal. This voltage is used to “pinch” the channel of the n-channel substrate in order to create a depletion region that will limit or block current flow. The gate voltage of the IRL620STRL, or the gate-source voltage, is 75 volts, meaning that a minimum depletion voltage of 75 volts must be applied to the gate terminal in order for the device to operate properly.

The IRL620STRL also features a threshold voltage, which is the voltage applied to the gate terminal at which conduction begins. For the IRL620STRL this threshold voltage is 6 volts, meaning that the device will start to conduct current when a minimum 6 volts is applied to the gate terminal. The IRL620STRL also has an absolute maximum voltage rating of 175 volts, meaning that the maximum voltages applied across the gate-drain should not exceed 175 volts.

The IRL620STRL is a versatile device and is suitable for use in many applications. It is designed primarily for high-power switching solutions, especially in industrial and automotive applications. It can also be used in motor control and in motor drive applications. Additionally, the IRL620STRL is also suitable for use in lighting solutions, such as LEDs and fluorescent lamps. Lastly, the IRL620STRL is also suitable for use in power supply applications.

In summary, the IRL620STRL is an efficient and space-saving enhancement-mode FET that is suitable for many power switching applications. It features an improved avalanche capability and low-side characteristics, making it suitable for devices that require high-power switching capabilities. Additionally, its high-frequency gate-to-source characteristics make it ideal for high-frequency solutions. The IRL620STRL is a versatile device and can be used for a wide range of applications, such as industrial and automotive solutions, motor control, lighting solutions, and power supply solutions.

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