IRL640S

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 10A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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< p>The IRL640S is a discrete FET (Field-effect Transistor) designed to control high-voltage and large current applications such as motor control and robotics. As a single cell, this FET features low temperature coefficient, high voltage and low on-resistance. It is also capable of operating at a wide range of frequencies due to its low switching time. < /p>< p>The IRL640S is a N-channel Enhancement Mode MOSFET (metal-oxide-semiconductor FET). Unlike traditional transistors, FETs do not require a current to flow through the transistor gate. Instead, a FET can be operated using a single voltage by using the principle of electric field-effect. This means that the voltage applied to the gate determines the current flowing through the other terminals. In the case of IRL640S, the gate is connected to the source, which provides the control voltage for the FET. < /p>< p>The IRL640S has a drain-source breakdown voltage of 600V, with a low-gate threshold voltage (VGS(th)) of 3.2V, allowing it to be used in high voltage applications. It also has a low on-resistance (RDS(ON)) of 0.8Ω, which minimizes the power dissipation in the transistor and increases the efficiency of the system. Its low-gate threshold voltage allows it to be operated at switching times between 10 and 20ns, which is extremely fast compared to conventional transistors. < /p>< p>The IRL640S’s main applications include motor control and robotics, high voltage supplies and power amplifiers. With its low on-resistance and fast switching time, the IRL640S is ideal for switching high voltages and controlling large currents such as found in motor control systems. Its low-gate-threshold voltage makes it suitable for applications involving high-speed switching, such as robotics and power supplies. Finally, its high drain-source breakdown voltage and low-gate threshold voltage also make it ideal for power amplifiers. < /p>< p>The IRL640S is a great choice for high-voltage and high-current applications because of its low temperature coefficient and low-gate threshold voltage. Its high drain-source breakdown voltage, low on-resistance and fast switching time make it ideal for controlling large currents and for high-speed switching. Finally, its high voltage and low-gate threshold voltage make it well-suited for use in power amplifiers. < /p>

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