IRL6283MTRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRL6283MTRPBFTR-ND |
Manufacturer Part#: |
IRL6283MTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 211A DIRECTFET |
More Detail: | N-Channel 20V 38A (Ta), 211A (Tc) 2.1W (Ta), 63W (... |
DataSheet: | IRL6283MTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Package / Case: | DirectFET™ Isometric MD |
Supplier Device Package: | DIRECTFET™ MD |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8292pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 158nC @ 4.5V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 0.75 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 211A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL6283MTRPBF is an advanced metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-voltage, high-current applications. This MOSFET features mature process technology that provides superior performance, reliability, and device lifetime. The IRL6283MTRPBF is housed in a small, portable TO-247-3 package and is suitable for use with high-side and low-side gate drive circuits.
The key features and benefits of the IRL6283MTRPBF include the following:
- Low on-resistance
- High current density
- Wide safe operating area
- Low gate charge
- Negative gate-to-source or gate-to-drain capacitance
- Frequency Compensation
- High-temperature performance
- Effective current utilization
The IRL6283MTRPBF is typically used in the following applications:
- Power Distribution
- Power switching
- Switching regulatory circuits
- High-frequency switching
- High-side/low-side switches
- High-efficiency converters
- DC/DC converters
- Induction heating
- Class D amplifiers
Working Principle
The IRL6283MTRPBF is a depletion-mode MOSFET. This type of MOSFET operates by creating a depletion region that is at its peak when the gate voltage is zero and reduces as the gate voltage increases. This depletion region forms an insulation layer between the source and drain terminals and acts as a rectifying barrier between them. The device operates when a voltage is applied to the gate terminal, causing a bias current to flow through the channel and increasing drain current.
The IRL6283MTRPBF has a negative gate-to-source or gate-to-drain capacitance, which means that its capacitance decreases as the gate voltage increases. This device also features a wide safe operating area and high-temperature performance when compared to other MOSFETs. The MOSFET is protected against electrostatic discharge (ESD) by added electrodes in the source, gate, and drain terminals.
The IRL6283MTRPBF is a great choice for high-power, high-performance applications. Its superior performance, high-temperature performance, and wide safe operating area make it a great fit for power switching and distribution, high-side/low-side switches, high-efficiency converters, and class D amplifiers. Additionally, its low gate charge and frequency compensation make it an ideal choice for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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