Allicdata Part #: | IRL620STRLPBF-ND |
Manufacturer Part#: |
IRL620STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 5.2A D2PAK |
More Detail: | N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | IRL620STRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRL620STRLPBF is a single field-effect transistor (FET) from International Rectifier, an Infineon Technologies Company. It is designed for automotive, industrial, and consumer applications. It is packaged in an SO8 package and has an operating temperature range of -55°C to +150°C.
The IRL620STRLPBF features low on-resistance, low power dissipation, and low gate charge. It has been optimized for high frequency DC/DC converters and switching regulator applications, as well as high-side load switch applications and PWM switching circuits. It is especially suited for mobile and battery powered systems.
The IRL620STRLPBF has a maximum drain current of 5.5A, and a maximum drain-source voltage of 55V. It features an N-channel design, with an on-resistance of 0.280Ω @ 4.5V. It has an RDS(on) of 0.250Ω @ 10V and an RDS(on) at 4.5V of 0.2Ω @ 10V. Furthermore, it has a maximum operating temperature of +150°C and a maximum gate charge of 13nC.
The IRL620STRLPBF works on the principle of a field-effect transistor, where current is controlled through electric fields created by a voltage. In this case, the FET has an N-channel design, which is controlled by an applied voltage to the gate terminal. When the voltage applied to the gate terminal is negative with respect to the potential at the source terminal, the N-channel is open and current can flow from the drain to the source. When the voltage applied to the gate terminal is positive with respect to the potential at the source terminal, the N-channel is closed, impeding current from flowing from the drain to the source.
As such, the IRL620STRLPBF is a versatile, robust FET for applications such as DC/DC converters and switching regulator applications, as well as high-side load switch applications and PWM switching circuits. Its low on resistance, low power dissipation, low gate charge, and efficient operation make it a great choice for automotive, industrial, and consumer applications. Its wide operating temperature range and robust construction make it a great choice for mobile and battery powered systems.
The specific data is subject to PDF, and the above content is for reference
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