IRL620PBF

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IRL620PBF is a 20V, 200mA n-channel enhancement-mode power mosfet. It is designed to replace traditional PNP bipolar transistors in many applications. This device is suitable for use in a wide range of electronic systems, including amplifiers, power converters, and switching circuits.

The IRL620PBF is a n-channel enhancement-mode mosfet and is normally off, meaning that it does not conduct until the gate voltage is greater than the source voltage. In its off state, the channel is pinched off and therefore no current flows when the drain-source voltage is applied to it. When the gate voltage is more positive than the source voltage, the electric field in the channel increases, allowing increased current conduction from drain to source. This can be effectively used to switch electrical loads on and off.

The IRL620PBF provides higher drain-source breakdown voltage than competing products, with a maximum value of 20V, and has better on-resistance than usually expected at this price point. It features low power dissipation and can switch up to 200mA current. To ensure good electrical performance and reliability, this device\'s junction temperature should not exceed 150℃ due to its maximum power dissipation of 350mW.

The use of the IRL620PBF is recommended for voltage regulation applications such as over-voltage protection, power supply sequencing, and voltage clamping. It has also been tested successfully in applications such as motor control, buck converters, and LCD backlight control. In addition, this device is also used in many types of electronic control circuits as it offers low on-state gate charge, low gate-source leakage current and low gate-source threshold voltage.

In conclusion, the IRL620PBF is a highly reliable, low-cost n-channel enhancement-mode mosfet, with good on-resistance, low power dissipation, and high breakdown voltage, making it an ideal choice for many automotive, consumer electronic, computer, and industrial applications.

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