IRLR3410PBF Allicdata Electronics
Allicdata Part #:

IRLR3410PBF-ND

Manufacturer Part#:

IRLR3410PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 17A DPAK
More Detail: N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-P...
DataSheet: IRLR3410PBF datasheetIRLR3410PBF Datasheet/PDF
Quantity: 1054
Stock 1054Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRLR3410PBF is a single N-channel, enhancement-mode MOSFET developed using advanced planar stripe, DMOS technology. This transistor is suitable for a wide variety of high-speed switching applications. The P-channel and N-channel features provide a ratio of maximum RDS(on) for high efficiency in a wide range of applications. It is commonly used in power conversion, especially power supply applications.

It has a low input voltage and a low output voltage, making it suitable for many low-voltage and high-current switching applications. The IRLR3410PBF has a low input capacitance and a high off-state current leakage making it ideal for switching applications in which power is conserved. The device also has a high slew rate, which is essential for fast switching.

The working principle behind the IRLR3410PBF is the field effect transistor. A field effect transistor (FET) is a transistor that operates based on the electric field created by a gate electrode. The gate electrode is responsible for controlling current flow between the source and drain elements which form the channel of the FET. When a voltage is applied to the gate terminal, a channel is created between the source and drain terminals, allowing current to flow through them. The current will flow through this channel until the gate voltage drops below a certain voltage threshold.

The IRLR3410PBF has two high-frequency performance capabilities. The first is its “body diode” effect, which reduces switching power loses. The second is the “channel thermal resistance” which is responsible for reducing on-state losses from high current switching. These two features make the IRLR3410PBF an ideal choice for high frequency, high current switching applications.

The IRLR3410PBF is also suitable for applications in which high currents are switched at high frequencies and low temperatures. When used in such applications, it provides better temperature performance than other single FET transistors. This makes it an ideal choice for motor control and switch-mode power supply applications.

The IRLR3410PBF can also be used in electronic ballast applications. It can be used to regulate the current in an electronic ballast in order to maintain the output voltage at a constant level. This is important for applications such as fluorescent lighting and some other high-intensity lighting systems.

The IRLR3410PBF is a reliable, cost-effective and easy to use transistor for a wide range of power conversion applications. It can be used for switching and stability applications in power supplies, regulators, motors, and many other high-power applications. Its low capacitance and high input current gain make it suitable for high-frequency switching applications. In addition, its “body diode” and “channel thermal resistance” features make it an ideal choice for applications where power is conserved in switching operations.

The specific data is subject to PDF, and the above content is for reference

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