IRLR024TRL

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRLR024TRL is a high-power and high-efficiency MOSFET. It is a discrete N-channel enhancement-mode transistor with a maximum frequency of 1.2 MHz and a gate-source breakdown voltage of 30 volts. Its operating temperature range is from -55°C to +175°C and its maximum drain-to-source voltage is 30 Volts. IRLR024TRL is suitable for applications such as motor control, load switching, motor drivers and DC-DC converters.

Application Field

IRLR024TRL is commonly used in various applications, especially those that require high power and high efficiency. It is used in applications such as motor control, load switching, motor drivers, DC-DC converters, LED lighting, and automotive electronics. Its high current carrying and low on-resistance features make it ideal for these applications. It can be used for both low-voltage and high-voltage applications, making it a versatile device for a variety of applications.

Working Principle

The IRLR024TRL is a discrete N-channel enhancement-mode power MOSFET. It operates by allowing current to flow from the drain to the source, when a positive voltage is applied to the gate that is greater than the threshold voltage (Vth). This voltage causes a large electric field to be created between the source and drain, creating a conducting channel in the MOSFET. This channel allows electrons to flow from the source to the drain when the switch is opened. When the switch is closed, the electric field collapses and the electrons stop flowing, which results in a “cut-off” state.The IRLR024TRL has a maximum drain-to-source voltage of 30 volts, which makes it suitable for various high-voltage applications. Additionally, its low on-resistance feature makes it suitable for applications where low power loss is important. The low on-resistance feature also makes it a good choice for motor control applications, as it can drive high current with low losses.

Conclusion

In conclusion, the IRLR024TRL is a high-power and high-efficiency MOSFET, ideal for applications such as motor control, load switching, motor drivers, DC-DC converters, LED lighting, and automotive electronics. It operates by allowing current to flow from the drain to the source when a positive voltage is applied to the gate, and can be used for both low-voltage and high-voltage applications. Its low on-resistance feature makes it a good choice for applications where low power loss is important.

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