Allicdata Part #: | IRLR2905TRRPBF-ND |
Manufacturer Part#: |
IRLR2905TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A DPAK |
More Detail: | N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | IRLR2905TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR2905TRRPBF is a high voltage, high-speed Power MOSFET designed to minimize on-state resistance while providing superior switching performance. This MOSFET is suitable for a variety of applications including DC-DC conversion, load switching, motor control, and general high-frequency switching applications. In this article, we will discuss the application fields and working principles of the IRLR2905TRRPBF.
Application Fields of IRLR2905TRRPBF
The IRLR2905TRRPBF is a 100V N-Channel Power MOSFET with very low on-state resistance. It is ideal for switch mode and synchronous rectification applications. It is well suited for use in applications such as DC-DC converters, DC motors, and other switch mode power supplies. This device is capable of switching from high to low with a maximum gate-source voltage of 20V.
The IRLR2905TRRPBF also features minimal leakage current and low gate-source capacitance, making it an excellent choice for high-frequency applications. It is also suitable for switching buck and boost applications with high gate-source impedances. The IRLR2905TRRPBF is built on industry-standard package sizes, allowing it to fit seamlessly into existing designs.
Working Principle of the MOSFET
The IRLR2905TRRPBF is a N-Channel MOSFET. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, and it is a type of digital transistor. MOSFETs are three-terminal semiconductor devices that control current by creating a voltage barrier between the source and the drain terminals. When a voltage is applied to the gate terminal, it forms a barrier between the source and the drain, creating a resistance between the two. By varying the gate voltage, the amount of current flowing between the source and the drained can be controlled.
The IRLR2905TRRPBF is a high voltage MOSFET, meaning it has a higher gate-source voltage rating than regular MOSFETs. This allows it to be used in applications that require higher voltage and current than a standard MOSFET. It also has a very low on-state resistance, which helps to reduce power losses in switch mode applications. Additionally, it features low gate-source capacitance, allowing it to switch at high frequencies.
Conclusion
The IRLR2905TRRPBF is an ideal choice for a variety of applications. Its low on-state resistance and high gate-source voltage rating make it well suited for switch mode and high-frequency switching applications. Additionally, its industry-standard package size makes it an easy fit for existing designs. We\'ve discussed the application fields and working principle of the IRLR2905TRRPBF, and shown that it is a highly versatile device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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