IRLR3110ZTRLPBF Allicdata Electronics
Allicdata Part #:

IRLR3110ZTRLPBF-ND

Manufacturer Part#:

IRLR3110ZTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 42A DPAK
More Detail: N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-...
DataSheet: IRLR3110ZTRLPBF datasheetIRLR3110ZTRLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLR3110ZTRLPBF FETs (field effect transistors) are popularly used in high-power switching and amplifier applications. The IRLR3110ZTRLPBF offers excellent voltage and current handling capabilities along with high switching speeds. This type of FET also provides better reliability compared to other components. The IRLR3100ZTRLPBF is a single N-Channel MOSFET (metal oxide semiconductor field effect transistor).

The IRLR3110ZTRLPBF has been designed for use in power supplies, audio amplifiers, switching power converters and other high current/voltage applications. The IRLR3110ZTRLPBF features low on-state resistance and fast switching times, making it ideal for a range of applications. The IRLR3110ZTRLPBF also offers excellent operational performance and high reliability, making it a reliable choice for applications that require high current and voltage ratings.

The IRLR3110ZTRLPBF works on the concept of field effect transistor where the current is controlled by a gate–source voltage. In the IRLR3110ZTRLPBF, a voltage is applied to the gate to create an electric field that modulates the behavior of the surrounding medium (the channel) between the source and the drain. By controlling the gate–source voltage, the current passing through the drain is controlled. The IRLR3110ZTRLPBF offers high-speed switching and can operate from a range of supply voltages.

The IRLR3110ZTRLPBF is best suited for low-voltage, high-current applications where a fast switching time is required. Some of the applications that make use of the IRLR3110ZTRLFPBF include switching power supplies, automotive motor speed generators, power supplies for computing devices, audio amplifiers, TV and monitor power supplies, telecommunications systems, industrial motor controls, and instrumentation systems.

In addition to its high performance, the IRLR3110ZTRLPBF also offers excellent packaging flexibility and high thermal stability. It is available in multiple SMT packages and its on-state resistance is low. The IRLR3110ZTRLPBF is also compatible with a wide range of gate voltages and power levels. Furthermore, it is backwards compatible with earlier versions and offers better protection against short-circuit faults.

The IRLR3110ZTRLPBF is an excellent choice for applications that require a fast, reliable and cost-effective solution. Its flexibility and low power consumption make it suitable for a wide range of high-power switching and amplifier applications. The IRLR3110ZTRLPBF is a reliable and cost-effective FET solution for those who are looking for a high-performance, low-cost solution.

The specific data is subject to PDF, and the above content is for reference

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