Allicdata Part #: | IRLR4132TRPBF-ND |
Manufacturer Part#: |
IRLR4132TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 160A DPAK |
More Detail: | |
DataSheet: | IRLR4132TRPBF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Description
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IRLR4132TRPBF Application Field and Working Principle
IRLR4132TRPBF is a high-voltage MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by International Rectifier (IR). Although IRLR4132TRPBF devices are designed for use in a wide range of applications such as power management, motor drive systems, and solar (photovoltaic) cells, this article delves deeper into the device\'s application field and working principle.Application Field
The IRLR4132TRPBF is a power MOSFET that can operate in d-c and a-c operations, and is designed for use in lighting and motor controllers, medical equipment, automotive power systems, and other industrial and commercial applications. Its low RDS-on (drain-source on-resistance) and high voltage ratings are ideal for power conversion circuits, such as those utilized in motor control, hybrid vehicles, and renewable energy applications.As a gate driver, the IRLR4132TRPBF is capable of driving loads up to 200v, making it well suited for motor control and power conversion circuits. Its positive temperature coefficient (PTC) ensures it can operate in extreme temperatures up to 175°C. Its integrated high-speed ESD protection and current limit protections ensures the device is not damaged while driving large loads such as motors.In addition to its use in motor control and power conversion circuits, the IRLR4132TRPBF provides low gate charge and low gate resistance for faster switching of power conversion circuits. This allows for the high speed operation of power supplies and inverters, reducing their power losses.Working Principle
The IRLR4132TRPBF is a high voltage, low-gate charge MOSFET. It consists of two parts: the body (or epitaxial layer) and the gate. The body consists of a substrate and a P-type epitaxial layer. The substrate is generally made of silicon, while the epitaxial layer consists of a composite of silicon and a diluted portion of the P-type impurities.The gate of a MOSFET consists of a number of metal layers and a gate dielectric. The gate dielectric is made of a thin layer of an insulator, such as silicon dioxide, which serves as an electrical insulator between the gate and the channel formed by the body of the FET. The gate is charged or discharged with an electric signal in order to control the current through the FET, allowing it to be used as an electronic switch.The IRLR4132TRPBF utilizes a vertical power MOSFET structure, which provides more efficient heat dissipation across the device and allows it to handle higher currents. This helps to reduce power loss during operation.In addition to its high-voltage, low-gate-charge operation, the IRLR4132TRPBF also utilizes avalanche breakdown protection, which allows it to withstand higher voltage levels and external stress. This helps to protect the gate and drain from excessive current.Conclusion
The IRLR4132TRPBF is an advanced power MOSFET designed for use in a wide range of applications. Its low RDS-on, low gate charge and high voltage operations make it suitable for motor control, power conversion and other applications. Its avalanche breakdown protection also ensures it is protected from high-voltage overloads, increasing its reliability and longevity. The device\'s integrated features and its ability to operate in extreme temperatures make it a popular choice for designers looking for reliable, high-performance power MOSFETs.The specific data is subject to PDF, and the above content is for reference
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