IRLR024 Allicdata Electronics
Allicdata Part #:

IRLR024-ND

Manufacturer Part#:

IRLR024

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 14A DPAK
More Detail: N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface...
DataSheet: IRLR024 datasheetIRLR024 Datasheet/PDF
Quantity: 562
Stock 562Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLR024 is a P-channel power MOSFET designed to optimize power conversion and control in synchronous rectification circuits. It is particularly well-suited for use as a low side switch in applications such as switching mode power supplies and motor drivers. The IRLR024 is offered in an industry standard package with a high level of integration and design flexibility. In this article, we will explore the application field and working principle of the IRLR024.

Applications of IRLR024

The IRLR024 has a wide range of applications. It is typically used in high power switching modes power supplies (SMPS), motor control circuits, and low side switches. It is suitable for applications that require very low on-resistance, low input capacitance and high voltage breakdown ratings, such as automotive systems, LED drivers and battery pack chargers. Additionally, its low on-resistance, high blocking voltage and fast switching times make it ideal for use in synchronous rectification circuits.

Working Principle of IRLR024

The IRLR024 P-channel MOSFET is built on a semiconductor process optimized for power applications and utilizes a special design to achieve very low on-resistance. The device consists of a source electrode, a drain electrode and a separating gate electrode. The gate electrode is used to control the conduction of electrons from source to drain. The gate electrode is insulated from the drain and source by a thin gate oxide layer.

When gate voltage is applied, it will attract the electrons from the source, through the gate oxide, to the gate and create an electric field. This electric field will attract holes from the drain and reduce the potential barrier in between the source and the drain. The mobility of the electrons will increase and conduction channels will form between the source and the drain. This conduction enables the current to flow from source to drain.

When no gate voltage is applied, the potential barrier between source and drain is high and current will not flow through the device. This is known as the device\'s “off” state. The IRLR024 has a low input capacitance, meaning that the gate voltage can be changed quickly with minimal effect on the drain and source potentials. This allows for faster switching times and better efficiency in high power applications.

Performance of IRLR024

The IRLR024 is capable of very low on-resistance, meaning that it is capable of conducting high current flows with minimal power loss. It has a very low input capacitance, which allows for faster switching times and better efficiency in power applications. Additionally, it has a high blocking voltage, which prevents reverse current from occurring when the device is in its “off” state. This is especially useful in synchronous rectification circuits, where fast switching times are required to minimize power losses.

The IRLR024 is available in a variety of packages, making it suitable for a wide range of applications. It is available in a 3-lead TO-220 package, which allows for a compact and cost-effective solution. Additionally, it is available in a 4-lead TSSOP package, which has a higher level of integration and design flexibility.

Conclusion

The IRLR024 is a P-channel power MOSFET designed to optimize power conversion and control in synchronous rectification circuits. It is particularly well-suited for use as a low side switch in applications such as switching mode power supplies and motor drivers. The IRLR024 has a wide range of applications due to its low on-resistance, low input capacitance and high voltage breakdown ratings. It is capable of very low on-resistance, fast switching times and high blocking voltage. Additionally, it is available in a variety of packages, allowing for a compact and cost-effective solution. In summary, the IRLR024 is a versatile and reliable device that is ideal for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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