IRLR3717TRLPBF Datasheet/PDFIRLR3717TRLPBF is a robust, low-cost MOSFET designed for use in power switching applications. It features an extremely low on-resistance, low gate threshold voltage, and low capacitance. This MOSFET also features design flexibility to fit any kind of application, from switching applications in automotive motor drives and welding machines to other DC motor-drive applications. It is also well-suited for almost any kind of power electronic applications.
IRLR3717TRLPBF has a high voltage-to-current ratio of up to 150V/mA, making it ideal for both high-current and low-voltage applications. It also offers a wide range of operating temperatures, from -55°C to +150°C, and has a high-temperature operating temperature range of 10°C to +200°C. It has a dielectric strength of 5 kilovolts and is fully-compliant with AEC-Q101 requirements.
IRLR3717TRLPBF utilizes an insulated-gate bipolar transistor (IGBT) with high current-carrying capability and efficient thermal management capabilities. It also provides excellent noise immunity, allowing it to operate reliably at high switching frequencies. Additionally, it is capable of a wide range of avalanche and short-circuit protection. The MOSFET also includes built-in protection circuitry against overvoltage, undervoltage, and overcurrent conditions.
The IRLR3717TRLPBF has a single-channel, N-channel, and dual P-channel configuration. It is designed to be easily integrated with a variety of circuit designs, including DC/DC converters, PWM controllers, and switching converters. The MOSFET offers low RDS(ON), fast-triggered rates, and low gate capacitance for superior switching performance.
The single channel of the IRLR3717TRLPBF MOSFET is well-suited for applications requiring high current and pulsed operation. It also has the added capability of providing protection against overvoltage, undervoltage, and overcurrent conditions. This makes it ideal for power switching applications in power supplies, motor controllers, and industrial control systems.
The dual N-channel configuration of the IRLR3717TRLPBF is ideal for applications that need long-distance transmission of power, such as in electric vehicles. This configuration allows the MOSFET to handle higher voltage loads than single channel configuration. It also offers low RDS(ON) and fast switching capability.
The dual P-channel configuration of the IRLR3717TRLPBF is suitable for a wide range of applications, including DC/DC converters, power amplifiers, and audio applications. This configuration is beneficial because of the MOSFET’s ability to handle high-voltage and high-current loads. The dual P-channel configuration is also beneficial because it features low RDS(ON) and fast-switching capability.
In summary, the IRLR3717TRLPBF can be used in a number of power switching applications due to its low-resistance and low capacitance. It also offers a wide range of operating temperatures and a strong dielectric strength for added reliability. Furthermore, the MOSFET features various configurations, which make it suitable for a variety of power switching applications. This makes IRLR3717TRLPBF an ideal choice for both industrial and consumer applications.