Allicdata Part #: | IRLR014TRL-ND |
Manufacturer Part#: |
IRLR014TRL |
Price: | $ 1.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 7.7A DPAK |
More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
DataSheet: | IRLR014TRL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.97322 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLR014TRL, a type of N-channel, enhancement-mode, MOSFET transistor, features enhanced performance under space-limited applications and is available in miniature transistor-outline (TO-252) or PowerPak SMD (SMD) packaging. This transistor, characterized by its high-frequency operation, low gate drive power, superior dv/dt capability, and fast switching speeds, is ideal for automotive and industrial applications. With its miniaturized design, the IRLR014TRL is an ideal solution for applications that require a high level of performance and reduced board space.
The IRLR014TRL is built with a P-type silicon substrate, N-channel enhancement mode MOSFETs, and a drain-source voltage of 60V. It is temperature-compensated and can operate up to 175°C. The on-state resistance of the IRLR014TRL is typically 2.9 ohms at 25°C, making it effective for applications that require a low on-state resistance such as DC-DC converters and motor controllers. The maximum current it can handle is 30A.
The IRLR014TRL transistor is used in a variety of industrial and automotive applications, including DC-DC converters, motor controllers, embedded systems, motor drives, and power management systems. It offers low on-state resistance, high temperature compatibility, fast switching speeds, and superior dv/dt capability. Additionally, it is also used for power amplifier circuits, power supplies, and power switching.
The IRLR014TRL’s working principle is based on the characteristic of a field effect transistor (FET). It uses an electric field to control the conductivity of a semiconductor material, allowing current to pass from the source to the drain when the gate voltage (Vgs) is above the threshold voltage (Vth). This voltage is the minimum voltage required for the transistor to turn on. When the gate voltage is below the threshold voltage, the transistor is off and no current flows between the source and the drain.
The IRLR014TRL is also equipped with a built-in current sensing mechanism. This is a self-protection mechanism that helps protect the transistor from an accidental overcurrent situation. When an overcurrent situation occurs, the current sensing mechanism senses the increased current flow and lowers the threshold voltage to turn the transistor off.
The IRLR014TRL’s high performance makes it ideal for space-limited applications. The small size and superior dv/dt capability make it an attractive transistor for various applications. Additionally, its fast switching speeds and low on-state resistance make it an effective option for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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