| Allicdata Part #: | IRLR3636TRLPBF-ND |
| Manufacturer Part#: |
IRLR3636TRLPBF |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 50A DPAK |
| More Detail: | N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-P... |
| DataSheet: | IRLR3636TRLPBF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.44203 |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 143W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3779pF @ 50V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRLR3636TRLPBF is a single N-channel enhancement mode field-effect transistor (MOSFET) with a separate source and drain connection. It is part of the 36V MOSFET family, used as a switch to control or regulate a variety of applications. It\'s versatile and can replace bipolar transistors, thyristors and any other switching applications.
The main applications of IRLR3636TRLPBF are DC motor control, switching power supplies, synchronous rectification,on/off control and other switch-mode power supplies.
IRLR3636TRLPBF has several key features that make it an ideal choice for power control applications:
- High voltage: 36V
- High-current capability: upto 5A
- Fast switching speed: less than 5ns
- High-efficiency: up to 97% maximum
- Low on-resistance: 0.32ohm @ 5A
In order to understand how the IRLR3636TRLPBF works, one must first understand the fundamentals of a MOSFET. A MOSFET is a three-terminal voltage-controlled device with an insulated gate that can be either an N-type or P-type. MOSFETs are current-controlled since the current flowing through the device is proportional to the gate voltage. The IRLR3636TRLPBF is an N-type device, meaning that it only passes current when the gate voltage is positive.
The IRLR3636TRLPBF has an N-type MOSFET structure which is composed of four layers, the source, drain and gate. The source is where the current flow begins and drain is where the current terminates. The gate is the control element of the device. When a positive voltage is applied to the gate, it allows the current to flow from the source to the drain. When the voltage is removed, the device shuts off and no current will flow. The IRLR3636TRLPBF also has a built-in body diode which can allow current to flow in the reverse direction when there is no voltage applied to the gate. The device also includes a heating element to control the device temperature.
In summary, the IRLR3636TRLPBF is a single N-channel enhancement mode MOSFET designed for high voltage and current capability. It is designed for use in the applications like DC motor control, switching power supplies, high-frequency switch-mode power supplies, synchronous rectification and on/off control. Its features such as low on-resistance, high current capability and high-efficiency make it an ideal choice for applications such as power supplies, motor control and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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IRLR3636TRLPBF Datasheet/PDF