IRLR3714TRRPBF

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IRLR3714TRRPBF is a N-Channel enhancement mode MOS field effect transistor, with VDS of 200V and ID of 14A, mostly utilized in DC-DC and AC-DC conversion operations. It is built on specific production processes and enjoys better performance characteristics than the isotype series IRLR3710.

Due to its well-tuned P and N channel designs, it features very low on-state resistance and amprent carrying capacity. The IRLR3714TRRPBF comes in a lead (Pb) free, 4-pin package, allowing a much faster time to market, combined with improved thermal and electrical stability.

Typical applications of the IRLR3714TRRPBF include DC-DC conversion, communication power supplies, notebook adapters, display monitors, motor drives, battery packs, and residential solar inverters.

Working Principle

IRLR3714TRRPBF is a self-biased MOSFET, meaning its gate drive voltage is generated through a resistive divider, making the device self-regulating. A gate driver is then applied to raise the gate voltage, instead of direct application of gate voltage, resulting in better control, stability, and longevity of the part.

The MOSFET is powered through the gate-drain voltage. When the gate voltage is higher than a certain threshold voltage, electrons in the heavily doped N-channel are attenuated, allowing very small current to flow through the channel and giving the device an on-state. When the gate voltage is decreased to less than a certain threshold voltage, the electrons in the channel are repelled, giving the device an off-state.

In this MOSFET, the drain-gate junction is reverse biased to help charging and discharging, while the source-gate junction is forward biased, resulting in better on and off performance. The P-type substrate improves the thermal performance of the device by improving the heat sink.

Other Characteristics

IRLR3714TRRPBF has a slew rate of 1V/ second, rise and fall times of 400nS, and maximum junction temperature of 150 degrees Celsius, with a maximum gate source voltage of 20V. It has a dielectric strength of 5000V, a channel mobility of 800cm²/Vs, a leakage current of 0.05mA, a capacitance of 4nF, and a diode forward voltage drop of 1.2V.

In general, the IRLR3714TRRPBF offers increased power density and better performance than the isotype series IRLR3710 because it is built on a different production process. With its superior characteristics, the IRLR3714TRRPBF is an excellent choice for applications requiring high current in a small space.

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