Allicdata Part #: | IRLR3802PBF-ND |
Manufacturer Part#: |
IRLR3802PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 12V 84A DPAK |
More Detail: | N-Channel 12V 84A (Tc) 88W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3802PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2490pF @ 6V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRLR3802PBF is a unique type of single shallow trench isolation (STI) MOSFET that is ideal for various application fields. It is an excellent device for applications where high precision switches are needed. It is also frequently used in communications, consumer electronics, video and imaging systems, as well as many other sectors. It is designed to operate using a low on-state voltage drop, low input capacitance, fast switching latency, and low leakage current.
The IRLR3802PBF is a normally-off MOSFET which means it uses a small amount of gate bias voltage to turn on. This feature is also known as "enhancement mode” and it makes it ideal for use in a variety of portable, power management and telecom applications. When gate voltage is absent, the IRLR3802PBF is in the off state, where the channel remains cut off, the output is low, and the transistor operates as an open switch. When a small gate bias voltage is applied to the transistor, the MOSFET is turned on resulting in a low on-state resistance, fast switching time, and low voltage across the transistor.
The working principle of the IRLR3802PBF is based on the three parts of a MOSFET, namely the Gate, Drain, and Source. For the MOSFET to operate, a positive voltage must be applied to the Gate and a negative voltage must be applied to the Source. By doing so the voltage between the Gate and Source breaks down the oxide layer and generates an electric field, thus resulting in a flow of electrons through the MOSFET. As the voltage increase, the current flow increases and the MOSFET operates in a linear region. However, when the voltage across the Gate and Source becomes too high, the MOSFET saturates and enters a non-linear region.
The IRLR3802PBF is typically used in applications where a high precision switch is required. It is used in a wide range of applications such as power management, portable devices, and communication. Due to its advantage of low on-state voltage drop and input capacitance it is a good choice for these applications. Moreover, the fast switching latency and low leakage current make it ideal for high speed switching applications. It is also used in video and imaging systems to control the flow of video signals.
In summary, the IRLR3802PBF is a unique type of MOSFET that is suitable for applications where a high precision switch is needed. It is an excellent device for power management, portable applications, communication, and video and imaging systems. It uses a low on-state voltage drop, low input capacitance, fast switching latency, and low leakage current for its operations. With its advantages, the IRLR3802PBF is becoming increasingly popular for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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