IXFK120N20

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The IXFK120N20 is a field-effect transistor (FET) from IXYS that belongs to the family of single power MOSFET chips. IXFK120N20 is an N-channel, low on-resistance 100V MOSFET chip with a package size of 1.7 mm x 2.1 mm and a typical RDS(ON) of 12 mΩ @ 10 V.

The IXFK120N20 is designed for a wide range of applications, such as automotive, industrial, and consumer electronics applications. Such as inverters, solar charging, e-mobility, LED lighting, converters and motor drives. It is suitable for use in high frequency power electronics systems, with a maximum operating frequency of up to 3 MHz, and also can be used in audio amplifiers and thermostatic controls.

What makes the IXFK120N20 special is its extremely low on-state resistance, which provides superior power efficiency and superior performance. This makes it ideal for low power applications where low power consumption is essential. It also has a wide temperature range of -55°C to 175°C, which makes it suitable for applications in harsh operating environments.

The IXFK120N20 operates on the principle of MOSFETs in which transistors are combined with integrated electrostatic and electro-optic fields to create an efficient field-effect transistor. This FET acts as a switch, which can be used to control the flow of current and voltage through the circuit. This FET also acts as an amplifier, which amplifies the input signals and can be used to increase the level of gain. The operating temperature and current ratings can also be adjusted according to the specifications of the application.

The IXFK120N20 is a very efficient solution for a wide range of applications where low on-state resistance is essential. Its wide temperature range and low on-state resistance makes it a suitable option for applications in harsh environments. Additionally, this FET has superior performance and power efficiency, which makes it ideal for a wide range of applications.

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