IXFK26N120P

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IXFK26N120P is a power field-effect transistor (FET) produced by IXYS Integrated Circuits Division. A power MOSFET is an electronic switch that is used to control electric power. It is a three-terminal semiconductor device in which the current passes between the source and the drain through an insulated gate. IXFK26N120P is ideal for use in switched-mode power supplies, inverters, motor drives, HID lamp ballast, welding power supplies, DC compressor drives, radio and TV transmission, and other high-power applications.

The IXFK26N120P is a high-performance fast switching Power MOSFET designed for high density applications. It features a 500V rating, with a low gate charge, low output capacitance and low R_DS(on). This enhances the switching speed and reduces EMI problems. It is suitable for use in many industrial applications requiring fast switching, minimal gate drive demands and ruggedness.

The working principle of IXFK26N120P is that the MOSFET acts as a voltage-controlled transistor, where the gate voltage determines the drain-to-source current. When a voltage is applied to the gate, an electric field is created, which attracts electrons from the channel to the gate, opening a channel through which current can flow from the source to the drain. It allows the voltage at the drain to be controlled by the voltage at the gate, and can be used as a switch or amplifier.

As a voltage-controlled switch, the IXFK26N120P can be used in various applications, including power switching and conversion (inverters, converters, chargers, DC-DC converters, etc.), electric motor control (motors, pumps, compressors, etc.), radio and TV transmission, and DC-DC servos.

IXFK26N120P is also used in HID lamp ballast, electric power tools, welding power supplies, and other high-power applications. It is designed for a wide variety of applications, and can be used for controlling large current with low power consumption. The MOSFET offers a range of benefits, such as low gate charge, low output capacitance, low switching loss and high breakdown voltage.

Due to its unique properties, IXFK26N120P is suitable for use in a variety of applications where space is limited and efficiency is desired. It offers a wide range of advantages over other power MOSFETs, including high breakdown voltage, low output capacitance, low gate charge, fast switching capabilities, and low on-state resistance.

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