IXFK170N10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFK170N10 transistor is a high-voltage N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) intended for operation in very high voltage environments. It is optimized for high-side switching up to the rated peak voltage of 1000 volts and features a built-in body diode, reduced gate-charge, and low-on-state resistance. As a result, the IXFK170N10 transistor can be used to switch very high voltages and currents, making it a suitable solution for motor control, server applications, and high-power applications requiring higher voltage operation.

This IXFK170N10 MOSFET has a max drain-source breakdown voltage (BVDSS) of 1000V, gate-source voltage (VGS) of ±20V, max continuous drain current (ID) of 6.7A, and total gate charge (Qg) of 28nC @VDS=500V. The on-resistance (RDS(on)) of the device is considered low at 2.9mΩ @VGS=10V. It also has a low dV/dt of 10V/ns, which helps prevent system-level issues that can cause failure or instability, such as power supply sag or external noise. All these parameters make the IXFK170N10 an ideal choice for high voltage switching applications.

To understand the working principle of the IXFK170N10, it is important to first understand how MOSFETs work. In a MOSFET, electrical current is controlled by an electric field. A MOSFET consists of four terminals: source (S), gate (G), drain (D), and body (B). The gate and source are insulated by a layer of oxide which gives the MOSFET its name. When a voltage is applied to the gate terminal, an electric field is generated which " pulls " electrons from the source and " pushes " them into the drain. This flow of electrons is what constitutes an electric current, and thus, by controlling the voltage applied to the gate, the flow of electrons can be turned on and off.

In the case of the IXFK170N10, the gate is optimized to operate at a high voltage and current, making it ideal for switching high voltages and currents. The built-in body diode helps reduce reverse recovery time and the low-on-state resistance helps reduce power consumption. As a result, the IXFK170N10 is a suitable solution for a range of applications requiring high voltage and/or current operation.

In summary, the IXFK170N10 is a high-voltage N-channel MOSFET that is optimized for high-side switching up to 1000V and has a gate charge, low on-resistance, and low dV/dt. Its low power consumption and fast switching enable it to be used in a variety of high-voltage, high-current applications, including motor control, server applications, and high power supplies.

The specific data is subject to PDF, and the above content is for reference