IXFK36N60 Allicdata Electronics
Allicdata Part #:

IXFK36N60-ND

Manufacturer Part#:

IXFK36N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 36A TO-264AA
More Detail: N-Channel 600V 36A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFK36N60 datasheetIXFK36N60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 25V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 180 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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An IXFK36N60 is an N-channel enhancement mode field-effect transistor (FET), made with high-speed low-on resistance DMOS technology. It is a single transistor device, meaning it is ideal for low-side switching applications and provide fast switching capabilities. It also has a very low input capacitance and is lightweight and compact. It is compatible with logic levels up to 5.5V.

The IXFK36N60 is designed for use in DC and AC load switching, motor control and lighting dimming applications. It has a very low on-resistance, allowing for quick switching times compared to other types of FETs. It has a rated voltage of 100V, a maximum drain-source voltage of 800V, a maximum drain current of 2A, and a maximum junction temperature of 175°C. Its drain-source breakdown voltage is typically 65V.

The working principle of the IXFK36N60 is relatively simple. The transistor is made up of three terminals: the source, gate, and drain. The source is the entry point through which current flows into the device. When voltage is applied to the gate terminal, it causes the conductive channel valley below the parameter change, allowing current to flow from source to drain. The current flowing between source and drain depends on the applied gate voltage, making the IXFK36N60 a voltage-controlled device.

The unique characteristic of a field-effect transistor is that its drain current is determined by the voltage at the gate rather than the voltage applied to its drain. This makes the IXFK36N60 an excellent choice for AC or DC loads that require very fast switching speeds and high current capacity. It also offers very low on-resistance and excellent power-dissipation characteristics.

In terms of practical applications, the IXFK36N60 is used in many areas, including audio systems, welding machines, power supplies, solenoids, and sensors. It is also frequently used in automotive and automotive accessories, such as power windows and power locks, LED lighting systems and door opener motors. In fact, IXFK36N60 is a very versatile transistor that can be used in a wide range of applications.

In summary, the IXFK36N60 is an N-channel enhancement mode field-effect transistor that is used in a wide range of applications. Its low on-resistance and fast switching speeds make it an excellent choice for switching AC and DC loads. It also offers excellent power-dissipation characteristics, making it an ideal choice for motor control and lighting dimming applications. It is an important device for many areas and can help improve the performance of a wide range of electronic systems.

The specific data is subject to PDF, and the above content is for reference

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