IXFK66N85X Allicdata Electronics
Allicdata Part #:

IXFK66N85X-ND

Manufacturer Part#:

IXFK66N85X

Price: $ 16.35
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 850V/66A ULTRA JUNCTION X-CLASS
More Detail: N-Channel 850V 66A (Tc) 1250W (Tc) Through Hole TO...
DataSheet: IXFK66N85X datasheetIXFK66N85X Datasheet/PDF
Quantity: 189
1 +: $ 14.86800
25 +: $ 12.50520
100 +: $ 11.49130
Stock 189Can Ship Immediately
$ 16.35
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 850V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK66N85X is a MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by Infineon Technologies AG. It is designed for power applications. The IXFK66N85X features in-line surface-mount technology, low on-state resistance and good switching properties that make it suitable for use in highly efficient power circuits.

A MOSFET is a three-terminal static device composed of three parts: a source, a gate and a drain. The gate forms an electrically isolated region between the source and the drain, allowing the MOSFET to be controlled by the voltage applied to the gate. When the gate voltage is low, the current flowing through the MOSFET is very low, so the MOSFET is said to be in its "off" state. When the gate voltage is raised, the current is allowed to flow, so the MOSFET is in its "on" state.

The IXFK66N85X is a depletion-type MOSFET capable of operating with drain-source voltages up to 660 volts. It has low on-state resistance, making it ideal for applications such as inverters, converters and motor controllers that require a fast on-state current that can be switched off quickly. The device has a high voltage capability and the ability to handle high peak currents, making it suitable for high power applications. The IXFK66N85X can also be combined with other transistors to create high-efficiency power-conversion circuits.

In addition to its use as a power device, the IXFK66N85X can also be used in non-power applications such as audio amplifiers and integrated circuits. The MOSFET can be used to create voltage-controlled switches or low-power circuits, such as oscillators. The device has a maximum frequency of 1.4 MHz and can be used for high-frequency applications. It also features a high input capacitance, making it ideal for active filters.

With its high-voltage capability and low on-state resistance, the IXFK66N85X can be used for many different power and signal processing applications. Its low resistance allows for efficient power conversion, while its high voltage capability makes it suitable for applications that require a large amount of power. The IXFK66N85X is an ideal solution for a variety of applications in the consumer, industrial and automotive industries.

The specific data is subject to PDF, and the above content is for reference

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