IXFK98N50P3

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The IXFK98N50P3 is an N-channel field effect transistor (FET) designed and manufactured by Infineon Technologies. It is a general purpose power MOSFET with a maximum drain-source voltage of 500V, a gate-source voltage of ±20V, and a maximum drain current of 98A at a junction temperature of 175°C. As such, it is suitable for applications such as switch-mode power supplies, isolated DC/DC converters, motor control, and high-side switching.

The IXFK98N50P3 is of the single-channel type, which means it has a single gate terminal and a single drain terminal. It has a reverse-bias protection circuit, meaning it is safe to use in applications where drain-source voltages are higher than the gate voltage. Additionally, it includes an avalanche-rated structure as well as partial current limitation and thermal overload protection.

The IXFK98N50P3 operates on a principle of field effect, whereby when voltage is applied to the gate terminal a "channel" is created between the drain and source. This channel enables current flow between the two terminals. The voltage required to create the channel is known as the threshold voltage. The current that flows through the channel is proportional to the voltage applied to the gate, and the degree to which the channel is "opened" is determined by the gate-to-source voltage.

The IXFK98N50P3 offers high-efficiency switching, with a low on-state resistance and minimal losses due to gate charge. It is also designed to handle high switching speeds, making it highly suitable for medium to high power applications. Its low power-loss feature also makes it superior to bipolar junction transistors in terms of power efficiency. Furthermore, due to its reverse-biased protection circuit it eliminates the need for manual insulation, making it much safer to use than BJTs.

Overall, the IXFK98N50P3 is a robust and reliable power FET that can be used to switch loads of up to 98A at voltages of up to 500V. It is suitable for applications such as motor control, DC/DC converters, and switch-mode power supplies, where it offers superior power efficiency and switching speeds compared to typical BJTs. Its reverse-bias protection circuit eliminates the need for manual insulation, while its avalanche-rated structure and partial current limitation protect against overloads and short circuits.

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