IXFK48N55 Allicdata Electronics
Allicdata Part #:

IXFK48N55-ND

Manufacturer Part#:

IXFK48N55

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 550V 48A TO-264AA
More Detail: N-Channel 550V 48A (Tc) 560W (Tc) Through Hole TO-...
DataSheet: IXFK48N55 datasheetIXFK48N55 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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N-Channel MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), are often used for switching and amplification applications in electronics due to their low power consumption and linear characteristics. The IXFK48N55 is a single N-Channel MOSFET that is often used in a variety of applications. This article will examine the IXFK48N55\'s application fields and working principle.

IXFK48N55 Application Fields

The IXFK48N55 is a type of MOSFET that is suitable for a variety of applications and electronic devices. It can be used in both digital and analog circuits and is versatile enough to handle signal amplification, signal switching, and power switching. The low RDS on this type of MOSFET allows for it to be used in power management circuits and switchmode power supply designs. Additionally, the IXFK48N55 can be used in high-efficiency motor control circuits, solar charge controllers, and low-noise amplifiers. This device has a wide range of capability when it comes to switching and power management, making it a popular choice for a number of applications.

IXFK48N55 Working Principle

MOSFETs are voltage controlled devices, meaning that their operation is controlled by the voltage applied to their gates. The IXFK48N55 is a N-Channel type MOSFET, meaning that it consists of four terminals: source, drain, gate, and body. The source and the drain are connected to the external power supply and the circuit that is being driven. The gate is connected to a control signal, and the body or substrate is connected to ground. When the gate voltage is less than the voltage at the source, the MOSFET is off and no current flows through it.

When the gate voltage is greater than the source voltage, the MOSFET is on and a low resistance voltage-controlled channel is created between the source and the drain. This creates a path for current to flow from the source to the drain and allows for control of the current. The current flow is proportional to the voltage applied to the gate. This allows the IXFK48N55 to be used for both amplification and switching applications. Additionally, this type of MOSFET has an extremely low RDS, which makes it well-suited for power management applications.

Conclusion

The IXFK48N55 is a single N-Channel MOSFET that is capable of handling a variety of applications. It is well-suited for switching and amplification applications, as well as power management circuits. This device is capable of controlling the current flow through it using a voltage control signal, making it ideal for a range of electronic circuits and devices. This versatile device has become a popular choice for many applications due to its low RDS and ease of use.

The specific data is subject to PDF, and the above content is for reference

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