Allicdata Part #: | IXFK30N110P-ND |
Manufacturer Part#: |
IXFK30N110P |
Price: | $ 19.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1100V 30A TO-264 |
More Detail: | N-Channel 1100V 30A (Tc) 960W (Tc) Through Hole TO... |
DataSheet: | IXFK30N110P Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 17.57570 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 1100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFK30N110P is a single p-channel MOSFET, manufactured by IXYS Corporation. It is part of the IXFH30N110P family, which includes a variety of product combinations with a wide range of threshold voltages and On-state Rds(on). The IXFH30N110P product series is one of the latest additions to the IXYS portfolio, and it is well suited for various applications.
The IXFK30N110P has a maximum drain-source voltage of 30V and a maximum gate-source voltage of ± 20V. It has a gate-source capacitance of 15 pF, an on-resistance of 48 mohms, and a threshold voltage of -4V. These features make it suitable for a variety of applications, from line-powered consumer devices to low voltage, high power situations.
The IXFK30N110P is a high power device and is capable of handling up to 15A of maximum drain-source current. This makes it well suited for applications such as digital switching circuits, power control, and motor drivers. It is also suitable for use in audio power amps and other high-power devices that require efficient switching. Furthermore, the IXFK30N110P is able to operate at low Voltages because of its low threshold voltage.
The IXFK30N110P has a common source FET working principle. In this configuration, the gate is used to control the flow of current between the source and the drain. The gate is connected to a voltage source and the drain-source are connected to a load. When a voltage is applied to the gate, a force is created that moves the electrons in the channel. This motion creates a conduction path between the source and the drain, allowing current to flow.
To ensure the maximum performance of the IXFK30N110P, IXYS recommends a few important parameters for its operation. These include an appropriate current bias for the application and the use of a suitable gate resistor for the proper control of the FET current and voltage. Furthermore, the use of diodes and bridges to protect the FET from hazardous currents can also be beneficial for its proper functioning.
The IXFK30N110P is designed with a special 2.5mΩ maximum On-state RDS(on), making it ideal for use in high-power applications. This low Rds(on) allows it to switch quickly and efficiently without dissipating significant heat. Furthermore, the IXFK30N110P also has a lower gate charge and gate-source capacitance than other MOSFETs, which allows for a faster switching. The IXFK30N110P\'s combination of low Rds(on), low gate charge, and high current handling capabilities make it an attractive choice for various power management applications.
The IXFK30N110P is a versatile MOSFET with a wide range of capabilities and applications. Its low gate charge and Rds(on) make it suitable for digital switching circuits, power control, and motor driver applications. Its high power handling capacity and low threshold voltage make it suitable for use in audio power amps and other high-power devices that require efficient switching. Furthermore, its low gate charge, gate-source capacitance, and high current handling capabilities make it a great choice for various power management applications.
The IXFK30N110P is a powerful and reliable MOSFET, designed for use in high-power applications. With its low threshold voltage, gate charge, and gate capacitance, and its flexibility and high current handling capabilities, it is an ideal choice for many kinds of low voltage, high power applications.
The specific data is subject to PDF, and the above content is for reference
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