IXFK48N60P Allicdata Electronics
Allicdata Part #:

IXFK48N60P-ND

Manufacturer Part#:

IXFK48N60P

Price: $ 8.94
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 48A TO-264
More Detail: N-Channel 600V 48A (Tc) 830W (Tc) Through Hole TO-...
DataSheet: IXFK48N60P datasheetIXFK48N60P Datasheet/PDF
Quantity: 1000
25 +: $ 8.04209
Stock 1000Can Ship Immediately
$ 8.94
Specifications
Series: HiPerFET™, PolarHT™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 135 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8860pF @ 25V
FET Feature: --
Power Dissipation (Max): 830W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA
Description

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The IXFK48N60P is a high power field-effect transistor (FET) assigned in the single category. It belongs to the class of power MOSFETs with low and medium on-resistance and robust avalanche characteristics. This N-channel FET is suitable for use in industrial motor control, AC motor control, and high voltage power switching applications.

The IXFK48N60P is an integrated circuit capable of supplying an output current of up to 60A. Additional features include an input voltage range of 4.5V to 18V and an output voltage range of up to 600V. This FET has an exceptional power density, meaning it is able to provide more power output per unit area. It also has superior oscillation behavior, ensuring reliable and long-lasting performance in high power switching applications.

The IXFK48N60P is designed to provide excellent performance in a wide array of power conditions. It has a continuous drain current of 48A, with a peak rating of 200A. The current gain and drain-source breakdown voltage are both 1.3KV, while the on-state resistance is rated at 0.02 ohms. It has an operation temperature range of -55 degrees Celsius to 150 degrees Celsius.

The IXFK48N60P features an integrated gate driver, allowing it to operate with a single power supply. The FET has an ESD rating of 8KV, making it better suited to long-term industrial and commercial applications.

The working principle of the IXFK48N60P is based on the principle of an MOSFET amplifier. This allows it to amplify control signals that are typically supplied from logic gates or integrated circuits. The FET consists of three terminals, namely, the Gate, Source, and Drain. Electrical charge can be applied to the Gate terminal of the FET to alter the amount of current that passes through the Source and Drain terminals. When a positive voltage is applied to the Gate terminal, the existing charge carriers (electrons or holes) will move to the Drain terminal and a current will flow. This is referred to as the “bias” condition and it is the basis of the FET’s operating principle.

The IXFK48N60P is an ideal power switch for both home and commercial-grade use. Its low on-resistance and robust avalanche characteristics make it a preferred choice for power switching applications in DC motor control, AC motor control, and high voltage power switching applications. Its high power density makes it a valuable tool for applications requiring a large amount of power output.

The specific data is subject to PDF, and the above content is for reference

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