IXFK36N60P Allicdata Electronics
Allicdata Part #:

IXFK36N60P-ND

Manufacturer Part#:

IXFK36N60P

Price: $ 6.42
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 36A TO-264
More Detail: N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-...
DataSheet: IXFK36N60P datasheetIXFK36N60P Datasheet/PDF
Quantity: 1000
25 +: $ 5.77760
Stock 1000Can Ship Immediately
$ 6.42
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 650W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK36N60P is a low voltage high current enhancement mode field effect transistor used in switching applications. It is a 60V N Channel MOSFET with fast switching and excellent power dissipation qualities. The IXFK36N60P is a versatile transistor that is often used in applications such as audio amplifiers, DC-DC converters, and power conditioner circuits. This article will explain the basic application and working principle of the IXFK36N60P transistor.

Basic Application
The IXFK36N60P is designed for use in high frequency, low voltage applications that require a high current output. The MOSFET is ideal for switching applications such as DC-DC converters, audio amplifiers, and power conditioner circuits. Additionally, the IXFK36N60P is well suited for frequency control and short circuit protection, as well as high frequency switching applications.

Working Principle
The IXFK36N60P is an enhancement mode transistor and operates according to the principle of channel stiction. When biased in the active region, a channel will form between the source and the drain of the MOSFET due to the action of the gate electric field. This channel creates an inversion layer which allows carriers to travel from the source to the drain, therefore increasing the conduction between the source and the drain. This inversion layer will determine the threshold voltage of the MOSFET and will be determined by the gate voltage.

Additionally, the IXFK36N60P features an enhanced high-current/low-voltage capability, low on-state resistance, and fast switching speed. The low on-state resistance enables the IXFK36N60P to achieve a higher conduction between the source and drain, which allows for increased efficiency in switching applications. The fast switching speed of the MOSFET is a result of the low gate capacitance which allows the transistor to quickly change between its "on" and "off" states.

Conclusion
The IXFK36N60P is an effective solution when a low voltage, high current transister is required. Its fast switching speed, low on-state resistance, and excellent power dissipation qualities make it a reliable solution for both switching and audio amplifying applications. The IXFK36N60P is designed for high frequency, low voltage applications, and its working principle is based on the principle of channel stiction.

The specific data is subject to PDF, and the above content is for reference

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