IXFK60N55Q2 Allicdata Electronics
Allicdata Part #:

IXFK60N55Q2-ND

Manufacturer Part#:

IXFK60N55Q2

Price: $ 17.51
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 550V 60A TO-264
More Detail: N-Channel 550V 60A (Tc) 735W (Tc) Through Hole TO-...
DataSheet: IXFK60N55Q2 datasheetIXFK60N55Q2 Datasheet/PDF
Quantity: 1000
25 +: $ 15.91300
Stock 1000Can Ship Immediately
$ 17.51
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 735W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK60N55Q2 is a 550 Volt, 60 amp field effect transistor (FET, also known as a metal oxide semiconductor FET, or MOSFET). It is a power semiconductor device, used extensively to regulate the flow of electricity in applications such as industrial equipment, power supplies, AC/DC converters, motor drives and computer power supplies. The IXFK60N55Q2 is a high voltage, low gate charge FET. It is designed to provide superior performance and reliability in harsh, high temperature operational environments.

As a FET, the IXFK60N55Q2 operates by controlling the voltage between its gate and its source. When the gate voltage is higher than the source voltage, the FET will conduct current. Similarly, when the voltage between the gate and source is zero or negative, the FET will not conduct current. This makes the IXFK60N55Q2 an ideal choice for power control applications, such as motor drives, AC/DC converters and switching power supplies. Additionally, the IXFK60N55Q2 features low power dissipation when in use, further improving its efficiency.

The IXFK60N55Q2 is a single type FET, meaning it contains one drain, one source and one gate. Each of these three terminals serves a specific function in controlling the flow of current. The drain is where current enters the FET; the source is where the current leaves; and the gate is what controls the flow of current. When the gate voltage is below the voltage of the source, current cannot flow through the device. When the gate voltage is increased, the device is ‘on’ and current can flow. The magnitude of the current that is able to flow through the device is inversely proportional to the gate-source voltage; the higher the gate-source voltage, the lower the maximum current. This configuration makes the IXFK60N55Q2 ideal for applications where precise current control is required, such as in motor drives, AC/DC converters and switching power supplies.

The IXFK60N55Q2 is available in a variety of packages, including surface mount and through hole packages. It is also available in a range of voltage, current and temperature ratings, making it suitable for a variety of applications. Additionally, the IXFK60N55Q2 is fully RoHS and ESD compliant, making it an environmentally friendly choice for industrial equipment.

The IXFK60N55Q2 is an ideal choice for applications in need of a FET with low power, low gate charge and exceptional performance in high temperature conditions. Its ability to precisely control the flow of current makes it a great choice for power control applications, such as motor drives, AC/DC converters and switching power supplies. Additionally, its availability in a range of packages and ratings makes it a versatile choice for any industrial equipment.

The specific data is subject to PDF, and the above content is for reference

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