IXFK52N60Q2 Allicdata Electronics
Allicdata Part #:

IXFK52N60Q2-ND

Manufacturer Part#:

IXFK52N60Q2

Price: $ 16.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 52A TO-264
More Detail: N-Channel 600V 52A (Tc) 735W (Tc) Through Hole TO-...
DataSheet: IXFK52N60Q2 datasheetIXFK52N60Q2 Datasheet/PDF
Quantity: 1000
25 +: $ 15.11240
Stock 1000Can Ship Immediately
$ 16.63
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 735W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 115 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK52N60Q2 is a insulated-gate field-effect transistor designed for both high and low voltage applications. This type of transistor has remarkable control, isolation, and power characteristics, which make them useful in many types of applications. These devices can also provide extremely high speed switching, making them ideal for signal generation, modulation, power control, voltage/current mode switching, and signal conditioning.

The PIN layout of the IXFK52N60Q2 is comprised of four pins arranged in a polar arrangement. The lower left pin is the source and the other three pins are designated by their relative position, going clockwise from the source. The upper right pin is the gate and the lower right pin is the drain. These transistors come in same isolated packages with the gate connected directly to the outside environment such as a heat sink.

The application field of the IXFK52N60Q2 include power switching, motor control, signal conditioning, and pulse modulation. These devices are especially suitable for high voltage, high power applications and can be used as a power switch in the power bus. Additionally, the IXFK52N60Q2 can also be used in motor control applications for speed and torque control, as well as for power control applications.

The working principle of the IXFK52N60Q2 is based on the movement of electrons through a semiconductor material. When a positive voltage is applied to the gate and the drain, this creates an electrostatic field which causes the gate to attract electrons and create a conductive channel between the gate and the drain. When this happens, current is allowed to flow through the channel. The current can be modulated by controlling the voltage applied to the gate.

When the voltage on the gate is increased, electrons flow through the channel more easily and the current flow is increased. When the voltage on the gate is decreased, the electrons become attracted to the gate and the current flow is decreased. Thus, the IXFK52N60Q2 can be used to control the current flow in various types of circuits.

The IXFK52N60Q2 is an amazing device which offers high switching speed, low operating voltage and good isolation characteristics. This makes it suitable for applications such as power control, motor control, and signal conditioning. In addition, the IXFK52N60Q2 is also capable of providing extremely high speed switching, making it an excellent choice for frequency generation and modulation, thanks to its electronic control capabilities.

The specific data is subject to PDF, and the above content is for reference

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