IXFK120N20P Allicdata Electronics
Allicdata Part #:

IXFK120N20P-ND

Manufacturer Part#:

IXFK120N20P

Price: $ 6.78
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 120A TO-264
More Detail: N-Channel 200V 120A (Tc) 714W (Tc) Through Hole TO...
DataSheet: IXFK120N20P datasheetIXFK120N20P Datasheet/PDF
Quantity: 1000
1 +: $ 6.78000
10 +: $ 6.57660
100 +: $ 6.44100
1000 +: $ 6.30540
10000 +: $ 6.10200
Stock 1000Can Ship Immediately
$ 6.78
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 714W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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IXFK120N20P is a type of insulated-gate field-effect transistor (IGFET) which falls under the FETs, MOSFETs and Single categories. It features a 20 amperes and 200 volts rating, making it a great choice for applications that require high power supply. Additionally, it also has an on resistance of less than 0.075 ohm. These properties make the IXFK120N20P a great choice for applications such as power conversion, motor control and power electronic circuit designs.

The underlying principles of IGFETs make the IXFK120N20P function, and a description of these principles is thus necessary to understand the transistor\'s working. Basically, an insulated-gate field-effect transistor (IGFET) is a three terminal semiconductor device wherein a voltage applied to the gate can control the current between the source and drain terminals. The electric field from the gate attracts and repels electrons, so by changing the gate voltage, one can control the current flowing between the source and the drain.

As for the IXFK120N20P specifically, it has a breakdown voltage of around 200 volts, making it great for high voltage applications. Additionally, it has an on-resistance of 0.075 ohms, making it ideal for use in low power devices such as power supplies and inverters. This low on-resistance is important for high power applications such as motor control and power electronic circuit designs.

The IXFK120N20P can also be used in wide variety of other applications as well. It is used in automotive applications such as lighting, battery charging systems, brake systems, and more. Additionally, it can also be used in industrial applications such as motor control, robotics, and switch mode power supplies. Additionally, it can be used in consumer electronics such as televisions, DVD players, and other audio equipment. Finally, it can be used in computer power supplies and servers as well.

In conclusion, IXFK120N20P is a great choice for applications that require high voltage and low on-resistance. Its 20 amperes and 200 volts rating make it suitable for a wide variety of applications from automotive to industrial. Additionally, its low on-resistance makes it an ideal choice for power conversion, motor control, and power electronic circuit designs. Overall, the IXFK120N20P provides users with a reliable and powerful transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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